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Charge trapping in irradiated SOI wafers measured by second harmonic generation

Total dose effects on silicon on insulator (SOI) UNIBOND wafers are studied via optical second harmonic generation (SHG). This technique is qualitatively compared with the pseudo-MOSFET technique for monitoring charges at the interfaces. Optical and electrical methods are combined to separate the co...

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Published in:	IEEE transactions on nuclear science 2004-12, Vol.51 (6), p.3231-3237
Main Authors:	Bongim Jun, Schrimpf, R.D., Fleetwood, D.M., White, Y.V., Pasternak, R., Rashkeev, S.N., Brunier, F., Bresson, N., Fouillat, M., Cristoloveanu, S., Tolk, N.H.
Format:	Article
Language:	English
Subjects:	Charge measurement Current measurement Electrical measurement Frequency conversion Insulators Monitoring Nonlinear optics Optical films Optical harmonic generation Optical refraction Optical sensors Oxides Pseudo-MOSFET radiation effects Second harmonic generation second harmonic generation (SHG) Signal detection Silicon silicon on insulator (SOI) Silicon on insulator technology total dose Trapping UNIBOND Wafers
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container_issue	6
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container_title	IEEE transactions on nuclear science
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creator	Bongim Jun Schrimpf, R.D. Fleetwood, D.M. White, Y.V. Pasternak, R. Rashkeev, S.N. Brunier, F. Bresson, N. Fouillat, M. Cristoloveanu, S. Tolk, N.H.
description	Total dose effects on silicon on insulator (SOI) UNIBOND wafers are studied via optical second harmonic generation (SHG). This technique is qualitatively compared with the pseudo-MOSFET technique for monitoring charges at the interfaces. Optical and electrical methods are combined to separate the contribution of the signal from each interface to the total SHG intensity. Radiation-induced oxide and interface traps increase the interface fields as determined from the SHG signals and the results are compared with electrical measurements.
doi_str_mv	10.1109/TNS.2004.839140
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Radiation-induced oxide and interface traps increase the interface fields as determined from the SHG signals and the results are compared with electrical measurements.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2004.839140</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Charge measurement ; Current measurement ; Electrical measurement ; Frequency conversion ; Insulators ; Monitoring ; Nonlinear optics ; Optical films ; Optical harmonic generation ; Optical refraction ; Optical sensors ; Oxides ; Pseudo-MOSFET ; radiation effects ; Second harmonic generation ; second harmonic generation (SHG) ; Signal detection ; Silicon ; silicon on insulator (SOI) ; Silicon on insulator technology ; total dose ; Trapping ; UNIBOND ; Wafers</subject><ispartof>IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3231-3237</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2004</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c351t-e03b3caa04b11143b6a5404da831d6d4fbdce82ec932cbdc99abb1691b42f4f73</citedby><cites>FETCH-LOGICAL-c351t-e03b3caa04b11143b6a5404da831d6d4fbdce82ec932cbdc99abb1691b42f4f73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1369475$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Bongim Jun</creatorcontrib><creatorcontrib>Schrimpf, R.D.</creatorcontrib><creatorcontrib>Fleetwood, D.M.</creatorcontrib><creatorcontrib>White, Y.V.</creatorcontrib><creatorcontrib>Pasternak, R.</creatorcontrib><creatorcontrib>Rashkeev, S.N.</creatorcontrib><creatorcontrib>Brunier, F.</creatorcontrib><creatorcontrib>Bresson, N.</creatorcontrib><creatorcontrib>Fouillat, M.</creatorcontrib><creatorcontrib>Cristoloveanu, S.</creatorcontrib><creatorcontrib>Tolk, N.H.</creatorcontrib><title>Charge trapping in irradiated SOI wafers measured by second harmonic generation</title><title>IEEE transactions on nuclear science</title><addtitle>TNS</addtitle><description>Total dose effects on silicon on insulator (SOI) UNIBOND wafers are studied via optical second harmonic generation (SHG). 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Radiation-induced oxide and interface traps increase the interface fields as determined from the SHG signals and the results are compared with electrical measurements.</description><subject>Charge measurement</subject><subject>Current measurement</subject><subject>Electrical measurement</subject><subject>Frequency conversion</subject><subject>Insulators</subject><subject>Monitoring</subject><subject>Nonlinear optics</subject><subject>Optical films</subject><subject>Optical harmonic generation</subject><subject>Optical refraction</subject><subject>Optical sensors</subject><subject>Oxides</subject><subject>Pseudo-MOSFET</subject><subject>radiation effects</subject><subject>Second harmonic generation</subject><subject>second harmonic generation (SHG)</subject><subject>Signal detection</subject><subject>Silicon</subject><subject>silicon on insulator (SOI)</subject><subject>Silicon on insulator technology</subject><subject>total dose</subject><subject>Trapping</subject><subject>UNIBOND</subject><subject>Wafers</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNp9kT1PwzAQhi0EEuVjZmCxGGBK64udxB5RxUelig4ts-U4l-KqTYqdCPXf4ypISAxMPp-e906nh5AbYGMApiart-U4ZUyMJVcg2AkZQZbJBLJCnpIRYyATJZQ6JxchbOJXZCwbkcX0w_g10s6b_d41a-oa6rw3lTMdVnS5mNEvU6MPdIcm9D72ygMNaNumojG6axtn6Rob9KZzbXNFzmqzDXj9816S9-en1fQ1mS9eZtPHeWJ5Bl2CjJfcGsNECQCCl7nJBBOVkRyqvBJ1WVmUKVrFUxtrpUxZQq6gFGkt6oJfkodh7t63nz2GTu9csLjdmgbbPmjFIJdMKh7J-3_JVIIqciUiePcH3LS9b-IVWqVMSgX8CE0GyPo2BI-13nu3M_6ggemjBx096KMHPXiIidsh4RDxl-ZxZZHxb5KNg7U</recordid><startdate>20041201</startdate><enddate>20041201</enddate><creator>Bongim Jun</creator><creator>Schrimpf, R.D.</creator><creator>Fleetwood, D.M.</creator><creator>White, Y.V.</creator><creator>Pasternak, R.</creator><creator>Rashkeev, S.N.</creator><creator>Brunier, F.</creator><creator>Bresson, N.</creator><creator>Fouillat, M.</creator><creator>Cristoloveanu, S.</creator><creator>Tolk, N.H.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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measured by second harmonic generation</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>2004-12-01</date><risdate>2004</risdate><volume>51</volume><issue>6</issue><spage>3231</spage><epage>3237</epage><pages>3231-3237</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>Total dose effects on silicon on insulator (SOI) UNIBOND wafers are studied via optical second harmonic generation (SHG). 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subjects	Charge measurement Current measurement Electrical measurement Frequency conversion Insulators Monitoring Nonlinear optics Optical films Optical harmonic generation Optical refraction Optical sensors Oxides Pseudo-MOSFET radiation effects Second harmonic generation second harmonic generation (SHG) Signal detection Silicon silicon on insulator (SOI) Silicon on insulator technology total dose Trapping UNIBOND Wafers
title	Charge trapping in irradiated SOI wafers measured by second harmonic generation
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