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Temperature dependence of channel mobility in HfO2-gated NMOSFETs
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Published in: | IEEE electron device letters 2004-02, Vol.25 (2), p.89 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Online Access: | Get full text |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2003.822648 |