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Temperature dependence of channel mobility in HfO2-gated NMOSFETs

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Bibliographic Details
Published in:IEEE electron device letters 2004-02, Vol.25 (2), p.89
Main Authors: Zhu, W.J, Ma, T.P
Format: Article
Language:English
Online Access:Get full text
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ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2003.822648