Successful enhancement of lifetime for SiO2 on 4H-SiC by N2O anneal

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Bibliographic Details
Published in:IEEE electron device letters 2004-11, Vol.25 (11), p.734-736
Main Authors: FUJIHIRA, Keiko, MIURA, Naruhisa, SHIOZAWA, Katsuomi, IMAIZUMI, Masayuki, OHTSUKA, Ken-Ichi, TAKAMI, Tetsuya
Format: Article
Language:English
Subjects:
Applied sciences
Compound structure devices
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Testing, measurement, noise and reliability
Online Access:Get full text
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ISSN:0741-3106
1558-0563
DOI:10.1109/led.2004.837533