A low-voltage 40-GHz complementary VCO with 15% frequency tuning range in SOI CMOS technology

The design of a low-voltage 40-GHz complementary voltage-controlled oscillator (VCO) with 15% frequency tuning range fabricated in 0.13-/spl mu/m partially depleted silicon-on-insulator (SOI) CMOS technology is reported. Technological advantages of SOI over bulk CMOS are demonstrated, and the accumu...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 2004-05, Vol.39 (5), p.841-846
Main Authors: Neric Fong, Jonghae Kim, Plouchart, J.-O., Zamdmer, N., Duixian Liu, Wagner, L., Plett, C., Tarr, G.
Format: Article
Language:English
Subjects:
Buffers
Circuits
CMOS
CMOS technology
Conductivity
Consumption
Electrical resistivity
Frequency
Metal oxide semiconductors
Noise
Noise measurement
Phase noise
Power measurement
Silicon on insulator technology
Tuning
Varactors
Voltage-controlled oscillators
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Summary:The design of a low-voltage 40-GHz complementary voltage-controlled oscillator (VCO) with 15% frequency tuning range fabricated in 0.13-/spl mu/m partially depleted silicon-on-insulator (SOI) CMOS technology is reported. Technological advantages of SOI over bulk CMOS are demonstrated, and the accumulation MOS (AMOS) varactor limitations on frequency tuning range are addressed. At 1.5-V supply, the VCO core and each output buffer consumes 11.25 mW and 3 mW of power, respectively. The measured phase noise at 40-GHz is -109.73 dBc/Hz at 4-MHz offset from the carrier, and the output power is -8 dBm. VCO performance using high resistivity substrate (/spl sim/300-/spl Omega//spl middot/cm) has the same frequency tuning range but 2 dB better phase noise compared with using low resistivity substrate (10 /spl Omega//spl middot/cm). The VCO occupies a chip area of only 100 /spl mu/m by 100 /spl mu/m (excluding pads).
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2004.826341