Effects of dopant granularity on superhalo-channel MOSFETs according to two- and three-dimensional computer simulations

We have performed two-dimensional (2-D) and three-dimensional (3-D) computer simulations of random dopant fluctuations in 25-nm planar n-channel metal-oxide-semiconductor field effect transistor (MOSFET) with superhalo channel doping. Our study shows that 2-D simulations that neglect lateral percola...

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Bibliographic Details
Published in:IEEE transactions on nanotechnology 2003-06, Vol.2 (2), p.97-101
Main Authors: Voon-Yew Aaron Thean, Sadd, M., White, B.E.
Format: Article
Language:English
Subjects:
Applied sciences
Carriers
Computer simulation
Dielectric constant
Dopants
Doping
Electronics
Exact sciences and technology
FETs
Fluctuation
Fluctuations
Halos
Mathematical models
MOSFET circuits
MOSFETs
Percolation
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor process modeling
Solid modeling
Transistors
Two dimensional displays
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Summary:We have performed two-dimensional (2-D) and three-dimensional (3-D) computer simulations of random dopant fluctuations in 25-nm planar n-channel metal-oxide-semiconductor field effect transistor (MOSFET) with superhalo channel doping. Our study shows that 2-D simulations that neglect lateral percolation of the carriers can overestimate the impact on threshold voltage (V/sub T/) fluctuations by as much as a factor of four. Fundamental differences in the way the 2-D and 3-D models describe subthreshold and near-threshold conduction are highlighted in our study. Our models reveal that surface percolation of carriers is an effective agent for reducing V/sub T/ fluctuations. In addition, the halo only enhances the V/sub T/ fluctuations by approximately 10%. Though the influence of the superhalo in the device may be overwhelmed by atomistic granularity according to the 2-D model, 3-D simulations show that the halo continues to function coherently for the MOSFET ensemble when charge percolation is accounted.
ISSN:1536-125X
1941-0085
DOI:10.1109/TNANO.2003.812587