Texture and surface analysis of NiO buffer deposited on biaxially textured Ni tapes by a MOCVD method

NiO buffer layers for YBCO coated conductors were deposited on textured Ni substrates by a metal-organic chemical vapor deposition(MOCVD) method. Processing variables were the oxygen partial pressure and substrate temperature. The degree of texture and the surface roughness of the deposited NiO surf...

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Bibliographic Details
Published in:IEEE transactions on applied superconductivity 2003-06, Vol.13 (2), p.2539-2542
Main Authors: SUN, Jong-Won, HYUNG SEOP KIM, BONG KI JI, PARK, Hai-Woong, HONG, Gye-Won, JUNG, Choong-Hwan, PARK, Soon-Dong, JUN, Byung-Hyuk, KIM, Chan-Joong
Format: Article
Language:English
Subjects:
Applied sciences
Atomic force microscopy
Atomic layer deposition
Buffer layers
Conductors
Electrical engineering. Electrical power engineering
Exact sciences and technology
Materials
MOCVD
Rough surfaces
Scanning electron microscopy
Surface roughness
Surface texture
Yttrium barium copper oxide
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Summary:NiO buffer layers for YBCO coated conductors were deposited on textured Ni substrates by a metal-organic chemical vapor deposition(MOCVD) method. Processing variables were the oxygen partial pressure and substrate temperature. The degree of texture and the surface roughness of the deposited NiO surface were analyzed by X-ray pole figure, atomic force microscopy (AFM), and scanning electron microscope (SEM). The (200) textured NiO layer was formed at 450 /spl sim/ 470 /spl deg/C and oxygen partial pressure of 1.67 Torr. Out-of-plane(/spl omega/-scan) and in-plane(/spl Phi/-scan) texture were 10.34/spl deg/ and 10.00/spl deg/, respectively. The surface roughness estimated by atomic force microscopy was in the range of 3.1 /spl sim/ 4.6 nm which was much smoother than that prepared by an oxidation method. We discuss the development of the (200) texture in the MOCVD-NiO films in terms of processing variables.
ISSN:1051-8223
1558-2515
DOI:10.1109/TASC.2003.811842