Enhanced Electrical Characteristics of AlGaN-Based SBD With In Situ Deposited Silicon Carbon Nitride Cap Layer

AlGaN/GaN Schottky barrier diodes (SBDs) with and without the in situ silicon carbon nitride (SiCN) cap layer were investigated. The fabricated SBD with the SiCN cap layer exhibited improved electrical characteristics, such as the forward turn-on voltage of about 0.7 V, the forward current of 4.1 A...

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Bibliographic Details
Published in:IEEE electron device letters 2012-04, Vol.33 (4), p.492-494
Main Authors: LEE, Jae-Hoon, JEONG, Jae-Hyun, LEE, Jung-Hee
Format: Article
Language:English
Subjects:
AlGaN/GaN
Aluminum gallium nitride
Applied sciences
Barriers
Deposition
Devices
Diodes
Electric potential
Electronics
Exact sciences and technology
Gallium nitride
Gallium nitrides
in situ
Leakage current
Passivation
Schottky barrier diodes (SBDs)
Schottky barriers
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
silicon carbon nitride (SiCN) cap layer
Silicon carbonitride
Surface morphology
Voltage
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Summary:AlGaN/GaN Schottky barrier diodes (SBDs) with and without the in situ silicon carbon nitride (SiCN) cap layer were investigated. The fabricated SBD with the SiCN cap layer exhibited improved electrical characteristics, such as the forward turn-on voltage of about 0.7 V, the forward current of 4.1 A at 1.5 V, and the reverse breakdown voltage of 630 V, as compared with the corresponding values of 0.8 V, 3.8 A, and 580 V for the reference SBD without the SiCN cap layer. This improvement in the device performance of the SiCN-SBD is because the in situ SiCN cap layer not only lowers the barrier height but also effectively passivates the surface of the device with better surface morphology.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2012.2182671