A Four-Channel 94-GHz SiGe-Based Digital Beamforming FMCW Radar

This paper presents a multi-channel frequency-modulated continuous-wave (FMCW) radar sensor operating in the frequency range from 91 to 97 GHz. The millimeter-wave radar sensor utilizes an SiGe chipset comprising a single signal-generation chip and multiple monostatic transceiver (TRX) chips, which...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2012-03, Vol.60 (3), p.861-869
Main Authors: Jahn, M., Feger, R., Wagner, C., Ziqiang Tong, Stelzer, A.
Format: Article
Language:English
Subjects:
Arrays
Capacitance
Chips
Frequency-modulated continuous wave (FMCW)
heterojunction bipolar transistors (HBTs)
Impedance
millimeter wave circuits
Mixers
MMICs
Noise
Radar
Resistance
Sensors
Sidebands
SiGe bipolar ICs
Silicon germanides
Voltage-controlled oscillators
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Summary:This paper presents a multi-channel frequency-modulated continuous-wave (FMCW) radar sensor operating in the frequency range from 91 to 97 GHz. The millimeter-wave radar sensor utilizes an SiGe chipset comprising a single signal-generation chip and multiple monostatic transceiver (TRX) chips, which are based on a 200-GHz f T HBT technology. The front end is built on an RF soft substrate in chip-on-board technology and employs a nonuniformly distributed antenna array to improve the angular resolution. The synthesis of ten virtual antennas achieved by a multiple-input multiple-output technique allows the virtual array aperture to be maximized. The fundamental-wave voltage-controlled oscillator achieves a single-sideband phase noise of -88 dBc/Hz at 1-MHz offset frequency. The TX provides a saturated output power of 6.5 dBm, and the mixer within the TRX achieves a gain and a double sideband noise figure of 11.5 and 12 dB, respectively. Possible applications include radar sensing for range and angle detection, material characterization, and imaging.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2011.2181187