Single-shot thermal energy mapping of semiconductor devices with the nanosecond resolution using holographic interferometry

A novel two-dimensional backside optical imaging method for thermal energy mapping inside semiconductor devices is presented. The method is based on holographic interferometry from the device backside and uses the thermo-optical effect. An image of the local thermal energy is obtained with 5-ns time...

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Bibliographic Details
Published in:IEEE electron device letters 2002-10, Vol.23 (10), p.606-608
Main Authors: Pogany, D., Dubec, V., Bychikhin, S., Furbock, C., Litzenberger, A., Groos, G., Stecher, M., Gornik, E.
Format: Article
Language:English
Subjects:
Devices
Electrostatic discharge
Energy resolution
Holographic interferometry
Holography
Image resolution
Mapping
Nanoscale devices
Nanostructure
Optical imaging
Optical interferometry
Semiconductor devices
Stresses
Thermal energy
Thermal stresses
Thermooptical devices
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Summary:A novel two-dimensional backside optical imaging method for thermal energy mapping inside semiconductor devices is presented. The method is based on holographic interferometry from the device backside and uses the thermo-optical effect. An image of the local thermal energy is obtained with 5-ns time resolution using a single stress pulse. The technique allows a unique recording of the internal device behavior. The method is demonstrated analyzing the nonrepetitive thermal and current flow dynamics in smart power electrostatic discharge (ESD) protection devices. A spreading of the current during the stress pulse is observed and explained by the effect of the negative temperature dependence of the impact ionization coefficient.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2002.803752