A new Pt/oxide/In0.49Ga0.51P MOS Schottky diode hydrogen sensor

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Published in:IEEE electron device letters 2002-11, Vol.23 (11), p.640
Main Authors: Liu, Wen-Chau, Lin, Kun-Wei, Chen, Huey-Ing, Wang, Chih-Kai, Cheng, Chin-Chuan, Cheng, Shiou-Ying, Lu, Chun-Tsen
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container_issue 11
container_start_page 640
container_title IEEE electron device letters
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creator Liu, Wen-Chau
Lin, Kun-Wei
Chen, Huey-Ing
Wang, Chih-Kai
Cheng, Chin-Chuan
Cheng, Shiou-Ying
Lu, Chun-Tsen
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doi_str_mv 10.1109/LED.2002.805006
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fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_journals_992866969</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2629142611</sourcerecordid><originalsourceid>FETCH-LOGICAL-p180t-b4754448a1c8bfe1b3f0578505a684282861fbecef9e12227d677f464c72bfd73</originalsourceid><addsrcrecordid>eNotjU1PwkAUADdGEyt69rrx3va97duvkyEISFIDCXom_dgV0HSxW6L8e0n0NKeZYeweIUMEm5fTp0wAiMyABFAXLEEpTQpSFZcsAU2YFgjqmt3EuAdAIk0Jexzzzn3z1ZCHn13r8kUHGdl5BZnEFX9Zrvm62YZh-Djxdhdax7entg_vruPRdTH0t-zKV5_R3f1zxN5m09fJc1ou54vJuEwPaGBIa9KSiEyFjam9w7rwILWRICtlSBhhFPraNc5bh0II3SqtPSlqtKh9q4sRe_jrHvrwdXRx2OzDse_Oy421Z1tZZYtfHrhHsA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>992866969</pqid></control><display><type>article</type><title>A new Pt/oxide/In0.49Ga0.51P MOS Schottky diode hydrogen sensor</title><source>IEEE Xplore (Online service)</source><creator>Liu, Wen-Chau ; Lin, Kun-Wei ; Chen, Huey-Ing ; Wang, Chih-Kai ; Cheng, Chin-Chuan ; Cheng, Shiou-Ying ; Lu, Chun-Tsen</creator><creatorcontrib>Liu, Wen-Chau ; Lin, Kun-Wei ; Chen, Huey-Ing ; Wang, Chih-Kai ; Cheng, Chin-Chuan ; Cheng, Shiou-Ying ; Lu, Chun-Tsen</creatorcontrib><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2002.805006</identifier><language>eng</language><publisher>New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</publisher><ispartof>IEEE electron device letters, 2002-11, Vol.23 (11), p.640</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2002</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Liu, Wen-Chau</creatorcontrib><creatorcontrib>Lin, Kun-Wei</creatorcontrib><creatorcontrib>Chen, Huey-Ing</creatorcontrib><creatorcontrib>Wang, Chih-Kai</creatorcontrib><creatorcontrib>Cheng, Chin-Chuan</creatorcontrib><creatorcontrib>Cheng, Shiou-Ying</creatorcontrib><creatorcontrib>Lu, Chun-Tsen</creatorcontrib><title>A new Pt/oxide/In0.49Ga0.51P MOS Schottky diode hydrogen sensor</title><title>IEEE electron device letters</title><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2002</creationdate><recordtype>article</recordtype><recordid>eNotjU1PwkAUADdGEyt69rrx3va97duvkyEISFIDCXom_dgV0HSxW6L8e0n0NKeZYeweIUMEm5fTp0wAiMyABFAXLEEpTQpSFZcsAU2YFgjqmt3EuAdAIk0Jexzzzn3z1ZCHn13r8kUHGdl5BZnEFX9Zrvm62YZh-Djxdhdax7entg_vruPRdTH0t-zKV5_R3f1zxN5m09fJc1ou54vJuEwPaGBIa9KSiEyFjam9w7rwILWRICtlSBhhFPraNc5bh0II3SqtPSlqtKh9q4sRe_jrHvrwdXRx2OzDse_Oy421Z1tZZYtfHrhHsA</recordid><startdate>20021101</startdate><enddate>20021101</enddate><creator>Liu, Wen-Chau</creator><creator>Lin, Kun-Wei</creator><creator>Chen, Huey-Ing</creator><creator>Wang, Chih-Kai</creator><creator>Cheng, Chin-Chuan</creator><creator>Cheng, Shiou-Ying</creator><creator>Lu, Chun-Tsen</creator><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20021101</creationdate><title>A new Pt/oxide/In0.49Ga0.51P MOS Schottky diode hydrogen sensor</title><author>Liu, Wen-Chau ; Lin, Kun-Wei ; Chen, Huey-Ing ; Wang, Chih-Kai ; Cheng, Chin-Chuan ; Cheng, Shiou-Ying ; Lu, Chun-Tsen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p180t-b4754448a1c8bfe1b3f0578505a684282861fbecef9e12227d677f464c72bfd73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2002</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Wen-Chau</creatorcontrib><creatorcontrib>Lin, Kun-Wei</creatorcontrib><creatorcontrib>Chen, Huey-Ing</creatorcontrib><creatorcontrib>Wang, Chih-Kai</creatorcontrib><creatorcontrib>Cheng, Chin-Chuan</creatorcontrib><creatorcontrib>Cheng, Shiou-Ying</creatorcontrib><creatorcontrib>Lu, Chun-Tsen</creatorcontrib><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, Wen-Chau</au><au>Lin, Kun-Wei</au><au>Chen, Huey-Ing</au><au>Wang, Chih-Kai</au><au>Cheng, Chin-Chuan</au><au>Cheng, Shiou-Ying</au><au>Lu, Chun-Tsen</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A new Pt/oxide/In0.49Ga0.51P MOS Schottky diode hydrogen sensor</atitle><jtitle>IEEE electron device letters</jtitle><date>2002-11-01</date><risdate>2002</risdate><volume>23</volume><issue>11</issue><spage>640</spage><pages>640-</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><cop>New York</cop><pub>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</pub><doi>10.1109/LED.2002.805006</doi></addata></record>
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title A new Pt/oxide/In0.49Ga0.51P MOS Schottky diode hydrogen sensor
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T13%3A45%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20new%20Pt/oxide/In0.49Ga0.51P%20MOS%20Schottky%20diode%20hydrogen%20sensor&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Liu,%20Wen-Chau&rft.date=2002-11-01&rft.volume=23&rft.issue=11&rft.spage=640&rft.pages=640-&rft.issn=0741-3106&rft.eissn=1558-0563&rft_id=info:doi/10.1109/LED.2002.805006&rft_dat=%3Cproquest%3E2629142611%3C/proquest%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-p180t-b4754448a1c8bfe1b3f0578505a684282861fbecef9e12227d677f464c72bfd73%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=992866969&rft_id=info:pmid/&rfr_iscdi=true