Structural and electrical properties of HfO2 with top nitrogen incorporated layer

A novel technique to control the nitrogen profile in HfO/sub 2/ gate dielectric was developed using a reactive sputtering method. The incorporation of nitrogen in the upper layer of HfO/sub 2/ was achieved by sputter depositing a thin Hf/sub x/N/sub y/ layer on HfO/sub 2/, followed by reoxidation. T...

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Bibliographic Details
Published in:IEEE electron device letters 2002-05, Vol.23 (5), p.249-251
Main Authors: Hag-Ju Cho, Chang Seok Kang, Onishi, K., Gopalan, S., Nieh, R., Rino Choi, Krishnan, S., Lee, J.C.
Format: Article
Language:English
Subjects:
Annealing
Boron
Dielectric substrates
Electrodes
Hafnium oxide
Leakage current
Nitrogen
Sputtering
Thermal degradation
Thermal stability
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Summary:A novel technique to control the nitrogen profile in HfO/sub 2/ gate dielectric was developed using a reactive sputtering method. The incorporation of nitrogen in the upper layer of HfO/sub 2/ was achieved by sputter depositing a thin Hf/sub x/N/sub y/ layer on HfO/sub 2/, followed by reoxidation. This technique resulted in an improved output characteristics compared to the control sample. Leakage current density was significantly reduced by two orders of magnitude. The thermal stability in terms of structural and electrical properties was also enhanced, indicating that the nitrogen-doped process is effective in preventing oxygen diffusion through HfO/sub 2/. Boron penetration immunity was also improved by nitrogen-incorporation. It is concluded that the nitrogen-incorporation process is a promising technique to obtain high-k dielectric with thin equivalent oxide thickness and good interfacial quality.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.998866