A CMOS RF power amplifier with parallel amplification for efficient power control

This paper introduces a CMOS radio-frequency (RF) power amplifier that uses parallel amplification to provide high efficiency over a broad range of output power. Three binary-weighted class-F unit amplifiers act in conjunction with an efficient power-combination network to provide a digital-to-analo...

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Bibliographic Details
Published in:IEEE journal of solid-state circuits 2002-06, Vol.37 (6), p.684-693
Main Authors: Shirvani, A., Su, D.K., Wooley, B.A.
Format: Article
Language:English
Subjects:
Amplification
Amplifiers
CMOS
CMOS technology
Digital-analog conversion
High power amplifiers
Networks
Power amplifiers
Power control
Power generation
Power transmission lines
Product design
Radio frequencies
Radio frequency
Radiofrequency amplifiers
Receivers & amplifiers
RF signals
Switches
Switching theory
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Summary:This paper introduces a CMOS radio-frequency (RF) power amplifier that uses parallel amplification to provide high efficiency over a broad range of output power. Three binary-weighted class-F unit amplifiers act in conjunction with an efficient power-combination network to provide a digital-to-analog conversion between a 3-b control signal and the amplitude of the output RF signal. The power-combination network is based on quarter-wavelength transmission lines that also serve as class-F harmonic terminations. A pMOS switch to the positive supply rail is used to avoid power dissipation when a unit amplifier is shut down. The parallel-amplifier architecture, integrated in a 0.25-/spl mu/m CMOS technology, occupies an active die area of 0.43 mm/sup 2/, operates at 1.4 GHz from a 1.5-V supply, and provides an output power adjustment range of 7-304 mW. The amplifier achieves a maximum power-added efficiency (PAE) of 49% and maintains a PAE of greater than 43% over the range of 100-300 mW.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2002.1004572