Consistency of bulk damage factor and NIEL for electrons, protons, and heavy ions in Si CCDs

It has been demonstrated that there are substantial differences between the form of defects introduced by electrons and those introduced by protons and heavy ions in Si charge coupled devices (CCDs). The consistency of the relationship between the displacement damage factor and nonionizing energy lo...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2002-12, Vol.49 (6), p.2684-2689
Main Authors: Kuboyama, S., Shindou, H., Hirao, T., Matsuda, S.
Format: Article
Language:English
Subjects:
Charge coupled devices
Charge-coupled image sensors
Consistency
Damage
Dark current
Defects
Degradation
Displacement
Electrons
Energy (nuclear)
Energy loss
Epitaxial layers
Heavy ions
Histograms
Manufacturing
Protons
Silicon
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Summary:It has been demonstrated that there are substantial differences between the form of defects introduced by electrons and those introduced by protons and heavy ions in Si charge coupled devices (CCDs). The consistency of the relationship between the displacement damage factor and nonionizing energy loss (NIEL) for electrons, protons, and heavy ions was clearly explained by the differences.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2002.805360