The effect of change of voltage acceleration on temperature activation of oxide breakdown for ultrathin oxides

We report the effect of change of voltage acceleration on temperature dependence of oxide breakdown for ultra-thin oxides below 6 nm. The time- or charge-to-breakdown (T/sub BD//Q/sub BD/) is directly measured over a wide range of temperatures (-30/spl deg/C to 200/spl deg/C) for several fixed volta...

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Bibliographic Details
Published in:IEEE electron device letters 2001-12, Vol.22 (12), p.603-605
Main Authors: Wu, E.Y., McKenna, J.M., Lai, W., Nowak, E., Vayshenker, A.
Format: Article
Language:English
Subjects:
Acceleration
Area measurement
Breakdown
Breakdown voltage
Capacitors
Coherence
Current measurement
Electric breakdown
Electric potential
Oxides
Q measurement
Stress measurement
Temperature dependence
Temperature distribution
Voltage
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Summary:We report the effect of change of voltage acceleration on temperature dependence of oxide breakdown for ultra-thin oxides below 6 nm. The time- or charge-to-breakdown (T/sub BD//Q/sub BD/) is directly measured over a wide range of temperatures (-30/spl deg/C to 200/spl deg/C) for several fixed voltages using different area capacitors and long-term stress. Using extensive experimental evidence, we unequivocally demonstrate that this strong temperature dependence of oxide breakdown on ultra-thin oxides is not a thickness effect as previously suggested at least for thickness range investigated in this work. It is a consequence of two experimental facts: 1) voltage-dependent voltage acceleration and 2) temperature-independent voltage acceleration within a fixed T/sub BD/ window. These results provide a coherent picture for T/sub BD/ in both voltage and temperature domains for ultra-thin oxides.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.974592