A 210-GHz fT SiGe HBT with a non-self-aligned structure

A record 210-GHz f T SiGe heterojunction bipolar transistor at a collector current density of 6-9 mA/μm 2 is fabricated with a new nonself-aligned (NSA) structure based on 0.18 μm technology. This NSA structure has a low-complexity emitter and extrinsic base process which reduces overall thermal cyc...

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Bibliographic Details
Published in:IEEE electron device letters 2001-11, Vol.22 (11), p.542-544
Main Authors: Jeng, S.J., Jagannathan, B., Rieh, J.-S., Johnson, J., Schonenberg, K.T., Greenberg, D., Stricker, A., Chen, H., Khater, M., Ahlgren, D., Freeman, G., Stein, K., Subbanna, S.
Format: Article
Language:English
Subjects:
Boron
Current density
Etching
Gallium arsenide
Germanium silicon alloys
Heterojunction bipolar transistors
Implants
Indium phosphide
Production
Silicon germanium
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Summary:A record 210-GHz f T SiGe heterojunction bipolar transistor at a collector current density of 6-9 mA/μm 2 is fabricated with a new nonself-aligned (NSA) structure based on 0.18 μm technology. This NSA structure has a low-complexity emitter and extrinsic base process which reduces overall thermal cycle and minimizes transient enhanced diffusion. A low-power performance has been achieved which requires only 1 mA collector current to reach 200-GHz f T . The performance is a result of narrow base width and reduced parasitics in the device. Detailed comparison is made to a 120-GHz self-aligned production device.
ISSN:0741-3106
1558-0563
DOI:10.1109/55.962657