Industrial application of heterostructure device simulation

We give an overview of the state-of-the-art of heterostructure RF-device simulation for industrial application based on III-V compound semiconductors. The work includes a detailed comparison of device simulators and current transport models to be used, and addresses critical modeling issues. Results...

Full description

Saved in:
Bibliographic Details
Published in:IEEE journal of solid-state circuits 2001-09, Vol.36 (9), p.1365-1370
Main Authors: Palankovski, V., Quay, R., Selberherr, S.
Format: Article
Language:English
Subjects:
Bipolar transistors
Circuit simulation
Computational modeling
Computer simulation
Devices
HEMTs
Heterojunction bipolar transistors
Heterostructures
High electron mobility transistors
Hydrodynamics
Industrial applications
MODFETs
Predictive models
Process control
Semiconductor devices
Semiconductors
Simulators
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We give an overview of the state-of-the-art of heterostructure RF-device simulation for industrial application based on III-V compound semiconductors. The work includes a detailed comparison of device simulators and current transport models to be used, and addresses critical modeling issues. Results from two-dimensional hydrodynamic simulations of heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) with MINIMOS-NT are presented in good agreement with measured data. The simulation examples are chosen to demonstrate technologically important issues which can be addressed and solved by device simulation.
ISSN:0018-9200
1558-173X
DOI:10.1109/4.944664