Development of gamma-ray monitor using CdZnTe semiconductor detector

In this study, we aimed to develop a new X-ray and gamma-ray monitor using the CdZnTe semiconductor detector, which has high sensitivity at room temperature. The pulse height spectra and the detection efficiencies of 10 mm/spl times/10 mm by 2 mm thick CdZnTe detector were measured in the energy ran...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2001-08, Vol.48 (4), p.1570-1576
Main Authors: Rasolonjatovo, D.A.H., Shiomi, T., Nakamura, T., Nishizawa, H., Tsudaka, Y., Fujiwara, H., Araki, H., Matsuo, K.
Format: Article
Language:English
Subjects:
Cadmium zinc tellurides
Computational efficiency
Computing time
Current measurement
Detectors
Energy measurement
Energy use
Gamma ray detection
Gamma ray detectors
Monitoring
Monitors
Monte Carlo methods
Pulse measurements
Semiconductors
Temperature sensors
Thickness measurement
X-ray detection
X-ray detectors
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Summary:In this study, we aimed to develop a new X-ray and gamma-ray monitor using the CdZnTe semiconductor detector, which has high sensitivity at room temperature. The pulse height spectra and the detection efficiencies of 10 mm/spl times/10 mm by 2 mm thick CdZnTe detector were measured in the energy range of 10 keV to 1.8 MeV by using monoenergetic X-ray and gamma-ray sources. The measured results showed very good agreement with the results calculated using the EGS4 Monte Carlo code taking into account the charge collection efficiency in the detector. By using two CZT detectors of 10 mm/spl times/10 mm/spl times/2 mm and 3 mm /spl times/3 mm/spl times/2 mm coupled with a filter, the weighted sum of a few energy channels with different cutoff energies was finally found to realize a flat energy response with an equivalent dose (counts per /spl mu/Sv) within /spl plusmn/30% or /spl plusmn/10% deviation.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.958398