Low noise In0.32(AlGa)0.68As/In0.43Ga0.57 As metamorphic HEMT on GaAs substrate with 850 mW/mm output power density

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Bibliographic Details
Published in:IEEE electron device letters 2000-01, Vol.21 (1), p.5
Main Authors: Whelan, C.S, Hoke, W.F, McTaggart, R.A, Lardizabal, M, Lyman, P.S, Marsh, P.F, Kazior, T.E
Format: Article
Language:English
Online Access:Get full text
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ISSN:0741-3106
1558-0563
DOI:10.1109/55.817435