InP-based enhancement-mode pseudomorphic HEMT with strained In0.45Al0.55As barrier and In0.75Ga0.25As channel layers

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Bibliographic Details
Published in:IEEE electron device letters 2000-05, Vol.21 (5), p.200
Main Authors: Ao, Jin-Ping, Zeng, Qing-Ming, Zhao, Yong-Lin, Li, Xian-Jie, Liu, Wei-Ji, liu, Shi-Yong, Liang, Chun-Guang
Format: Article
Language:English
Online Access:Get full text
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ISSN:0741-3106
1558-0563
DOI:10.1109/55.841295