InP-based enhancement-mode pseudomorphic HEMT with strained In0.45Al0.55As barrier and In0.75Ga0.25As channel layers

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Published in:IEEE electron device letters 2000-05, Vol.21 (5), p.200
Main Authors: Ao, Jin-Ping, Zeng, Qing-Ming, Zhao, Yong-Lin, Li, Xian-Jie, Liu, Wei-Ji, liu, Shi-Yong, Liang, Chun-Guang
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container_title IEEE electron device letters
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creator Ao, Jin-Ping
Zeng, Qing-Ming
Zhao, Yong-Lin
Li, Xian-Jie
Liu, Wei-Ji
liu, Shi-Yong
Liang, Chun-Guang
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doi_str_mv 10.1109/55.841295
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title InP-based enhancement-mode pseudomorphic HEMT with strained In0.45Al0.55As barrier and In0.75Ga0.25As channel layers
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