Characterization of Chemical Bath Deposited CdS, CdSe and PbS

• Published in: Journal of materials science and engineering. A 2011-10, Vol.1 (5), p.692-704
• Main Authors: Moreno, O P, Avila, G A, Cerna, J R, Tecorralco, J H, Portillo, M C, Juarez, J M, Morales, R L, Angel, OZ
• Format: Article
• Language: chi ; eng
• Subjects: Cadmium; Cadmium selenides; Cadmium sulfides; CdSe; Deposition; Electronics; Grain size; Intermetallics; PBS; Phase transformations; 化学浴沉积; 吉布斯自由能; 平均晶粒尺寸; 扫描电子显微镜; 薄膜生长; 表征
• ISSN: 2161-6213

CdS, CdSe and PbS films were grown onto glass by chemical bath deposition （CBD）. Different constant deposition temperatures （Td） were employed in the range 0-80 ℃ with subintervals of 10 ℃. Concentration of reagents, pH, and stirring were maintained constants. A microcrystalline mixture CdCO3 and CdS were grown. At intermediates Td values a mixture of both materials present, i.e., For Td ≤40 ℃, the intensity of the main of X-ray Diffraction （XRD） CdS peak is abruptly reduced. By scanning electronic microscopy （SEM） with Td= 80 ℃, concentration atomic： Cd = 49.10, S = 51.90, for Td ≤ 70 ℃, increase of carbon and oxygen. The CdSe, average grain size （GS） increased monotonic with Td, reaching saturation of 70 ℃, with GS values of 5-16 nm. At low Td values （0-20 ℃）, the structural phase was found, and the high Td= 70 ℃ on material 5-16 nm was appreciated transition to phase Wurzite （W）→ Zinbclende （ZB） and phases mixture： W/ZB, grain size （GS） 9-27 nm. By （XRD）, PbS grow in W phase at all films, for Td=60 ℃, was observed preferential orientation in plane [111] with （GS） of 19-26 nm also a Gibbs free energy calculation is included.