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Chemical and optical characterisation of atomic layer deposition aluminium doped ZnO films for photovoltaics by glow discharge optical emission spectrometry

Aluminium doped ZnO (AZO) alloy films produced by atomic layer deposition (ALD) are analysed by glow discharge optical emission spectrometry (GD-OES). A measurement procedure is established, to determine simultaneously thickness, mean chemical composition and refractive index of homogeneous films us...

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Bibliographic Details
Published in:Journal of analytical atomic spectrometry 2011-01, Vol.26 (4), p.822-827
Main Authors: Schmitt, S. W., Gamez, G., Sivakov, V., Schubert, M., Christiansen, S. H., Michler, J.
Format: Article
Language:English
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Summary:Aluminium doped ZnO (AZO) alloy films produced by atomic layer deposition (ALD) are analysed by glow discharge optical emission spectrometry (GD-OES). A measurement procedure is established, to determine simultaneously thickness, mean chemical composition and refractive index of homogeneous films using GD-OES and profilometry measurements. The GD-OES measured Al contents of the AZO films lie below those expected for the realised ALD cycles. Determined refractive indices are of the same accuracy as ellipsometry measurements and are dependent on the film composition as well as on the wavelength of the spectral lines used for analysis. The findings support the use of GD-OES as an analysis technique in the development of photovoltaic thin films.
ISSN:0267-9477
1364-5544
DOI:10.1039/c0ja00158a