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In this paper, we report the growth of M-plane GaN thin films on LiGaO2 (100) substrates pre-annealed in vacuum and in air ambient. The surface of M-plane GaN film grown on the LiGaO2 (100) substrate pre-annealed in air ambient was significantly improved. X-ray diffraction data showed that the M-pla...

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Bibliographic Details
Published in:Journal of crystal growth 2012-02, Vol.340 (1), p.51-55
Main Authors: Li, W., Wen, C., Yamashita, M., Nonomura, T., Hayakawa, Y., Tatsuoka, H.
Format: Article
Language:English
Subjects:
Crystal growth
Crystals
Diffraction
Fused salts
Gallium nitrides
Strain
Thin films
X-rays
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Summary:In this paper, we report the growth of M-plane GaN thin films on LiGaO2 (100) substrates pre-annealed in vacuum and in air ambient. The surface of M-plane GaN film grown on the LiGaO2 (100) substrate pre-annealed in air ambient was significantly improved. X-ray diffraction data showed that the M-plane GaN thin film grown on the LiGaO2 (100) substrate pre-annealed in air ambient has better crystal quality than that grown on the LiGaO2 (100) substrate pre-annealed in vacuum. In addition, the strain generated between GaN thin film and LiGaO2 substrate was relaxed when the GaN thin film grew on the LiGaO2 substrate pre-annealed in air ambient. It revealed that the thermal annealing LiGaO2 substrate in air ambient can suppress the formation of lithium-rich surface effectively, and then one can grow a high quality M-plane GaN thin film on the LiGaO2 substrate.
ISSN:0022-0248
DOI:10.1016/j.jcrysgro.2011.11.059