Point defect determination by eliminating frequency dispersion in C– V measurement for AlGaN/GaN heterostructure

► An improved capacitance–voltage model to eliminate frequency dispersion phenomenon. ► A mathematic model to rule out the effect of surface state and interface state. ► An accurate calculation of the amount of bulk defect. ► Compared with PL and HRXRD data, it reveals that point defect dominates bu...

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Bibliographic Details
Published in:Solid-state electronics 2012-02, Vol.68, p.98-102
Main Authors: Li, Liang, Yang, Lin-An, Zhang, Jin-Cheng, Zhang, Lin-Xia, Dang, Li-Sha, Kuang, Qian-Wei, Hao, Yue
Format: Article
Language:English
Subjects:
AlGaN/GaN
Aluminum gallium nitrides
Applied sciences
Bulk defect
Capacitance–voltage characteristic
Compound structure devices
Defects
Dispersions
Edge dislocations
Electronics
Exact sciences and technology
Frequency dispersion
Gallium nitrides
Mathematical models
Point defects
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:► An improved capacitance–voltage model to eliminate frequency dispersion phenomenon. ► A mathematic model to rule out the effect of surface state and interface state. ► An accurate calculation of the amount of bulk defect. ► Compared with PL and HRXRD data, it reveals that point defect dominates bulk defect. In this paper, an improved small-signal equivalent model is introduced to eliminate frequency dispersion phenomenon in capacitance–voltage ( C– V) measurement, and a new mathematic method is proposed to calculate the amount of bulk defect existing in the GaN buffer layer. Compared with photoluminescence (PL) and high resolution X-ray diffraction (HRXRD) data, it is identified that the main component of the bulk defect concentration is made up of the point defect concentration, rather than the edge dislocation concentration. All these results prove the accuracy of the improved C– V model and feasibility of the mathematic model.
ISSN:0038-1101
1879-2405
DOI:10.1016/j.sse.2011.11.001