Effect of annealing temperature and annealing atmosphere on the structure and optical properties of ZnO thin films on sapphire (0001) substrates by magnetron sputtering

• Published in: Applied surface science 2012-01, Vol.258 (7), p.2479-2485
• Main Authors: Cui, Lin, Zhang, Hua-Yu, Wang, Gui-Gen, Yang, Fang-Xu, Kuang, Xu-Ping, Sun, Rui, Han, Jie-Cai
• Format: Article
• Language: English
• Subjects: Annealing; Atomic force microscopy; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Diffraction; Emission; Exact sciences and technology; Magnetron sputtering; Magnetron sputtering deposition; Photoluminescence; Physics; Temperature; Thin films; X-ray diffraction; Zinc oxide; ZnO
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2011.10.076

ZnO thin films were epitaxially grown on sapphire (0001) substrates by radio frequency magnetron sputtering. ZnO thin films were then annealed at different temperatures in air and in various atmospheres at 800°C, respectively. The effect of the annealing temperature and annealing atmosphere on the structure and optical properties of ZnO thin films are investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL). A strong (002) diffraction peak of all ZnO thin films shows a polycrystalline hexagonal wurtzite structure and high preferential c-axis orientation. XRD and AFM results reveal that the better structural quality, relatively smaller tensile stress, smooth, uniform of ZnO thin films were obtained when annealed at 800°C in N2. Room temperature PL spectrum can be divided into the UV emission and the Visible broad band emission. The UV emission can be attributed to the near band edge emission (NBE) and the Visible broad band emission can be ascribed to the deep level emissions (DLE). By analyzing our experimental results, we recommend that the deep-level emission correspond to oxygen vacancy (VO) and interstitial oxygen (Oi). The biggest ratio of the PL intensity of UV emission to that of visible emission (INBE/IDLE) is observed from ZnO thin films annealed at 800°C in N2. Therefore, we suggest that annealing temperature of 800°C and annealing atmosphere of N2 are the most suitable annealing conditions for obtaining high quality ZnO thin films with good luminescence performance.