Electric-field control of domain wall motion in perpendicularly magnetized materials

• Published in: Nature communications 2012-05, Vol.3 (1), p.847-847, Article 847
• Main Authors: Schellekens, A.J., van den Brink, A., Franken, J.H., Swagten, H.J.M., Koopmans, B.
• Format: Article
• Language: English
• Subjects: 639/301/119/997; 639/766/119; Humanities and Social Sciences; multidisciplinary; Science; Science (multidisciplinary)
• ISSN: 2041-1723; 2041-1723
• DOI: 10.1038/ncomms1848

Domain wall motion in materials exhibiting perpendicular magnetic anisotropy has been the subject of intensive research because of its large potential for future spintronic devices. Recently, it has been shown that perpendicular anisotropy of thin films can be influenced by electric fields. Voltage-controlled magnetic switching has already been realized, which is envisioned to lead to low-power logic and memory devices. Here we demonstrate a radically new application of this effect, namely control of domain wall motion by electric fields. We show that an applied voltage perpendicular to a Co or CoB wire can significantly increase or decrease domain wall velocities. Velocity modification over an order of magnitude is demonstrated (from 0.4 to 4 μm s −1 ), providing a first step towards electrical control of domain wall devices. This opens up possibilities of real-time and local control of domain wall motion by electric fields at extremely low power cost. The motion of domain walls in magnetic materials characterized by a perpendicular axis of magnetization is a promising means of controlling information in future memory and logic devices. Schellekens et al . show the velocity of domain walls in such systems can be controlled by using an applied electric field.