Morphology and thermal stability of AlF3 thin films grown on Cu(100)

The growth of ultrathin epitaxial layers of aluminum fluoride on Cu(100) has been studied by a combination of surface science techniques. Deposition at room temperature results in step decoration followed by the formation of dendritic two-dimensional islands that coalesce to form porous films. Ultra...

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Bibliographic Details
Published in:Surface science 2012-03, Vol.606 (5-6), p.573-579
Main Authors: Ruano, G., Moreno-López, J.C., Passeggi, M.C.G., Vidal, R.A., Ferrón, J., Niño, M.Á., Miranda, R., de Miguel, J.J.
Format: Article
Language:English
Subjects:
Aluminum
Aluminum fluoride
Aluminum fluorides
ANNEALING PROCESSES
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
DEPOSITION
Electron beam resist
Epitaxial layers
EPITAXY
Exact sciences and technology
FLUORIDES
FLUORINE
Insulators
Islands
MORPHOLOGY
Physics
Radiolysis
Spintronics
THERMAL STABILITY
Thick films
THIN FILMS
Three dimensional
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Summary:The growth of ultrathin epitaxial layers of aluminum fluoride on Cu(100) has been studied by a combination of surface science techniques. Deposition at room temperature results in step decoration followed by the formation of dendritic two-dimensional islands that coalesce to form porous films. Ultrathin layers (up to 2 monolayers in thickness) are morphologically unstable upon annealing; de-wetting takes place around 430K with the formation of three-dimensional islands and leaving a large fraction of the Cu surface uncovered. Films several nanometers thick, on the contrary, are stable up to ca. 730K where desorption in molecular form sets on. The effect of electron irradiation on the AlF3 has also been characterized by different spectroscopic techniques; we find that even small quantities of stray electrons from rear electron beam heating can provoke significant decomposition of the aluminum fluoride, resulting in the release of molecular fluorine and the formation of deposits of metallic aluminum. These features make AlF3 an interesting material for spintronic applications. [Display omitted] ► Study of the thermal stability and morphology of epitaxial AlF3 films on Cu(100). ► AlF3 decomposes upon low-energy electron irradiation. ► Thin films (1–2 ML) rearrange and dewet the substrate upon mild annealing (T
ISSN:0039-6028
1879-2758
DOI:10.1016/j.susc.2011.11.015