GIDL behavior of p- and n-MuGFET devices with different TiN metal gate thickness and high-k gate dielectrics

• Published in: Solid-state electronics 2012-04, Vol.70, p.44-49
• Main Authors: Galeti, M., Rodrigues, M., Martino, J.A., Collaert, N., Simoen, E., Claeys, C.
• Format: Article
• Language: English
• Subjects: Applied sciences; Channel width; Channels; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Devices; Dielectrics; Drains; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronics; Exact sciences and technology; Gates; GIDL; High-k dielectric; Oxides; Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon oxynitride; SOI Multiple Gate FET (MuGFET); Surface double layers, schottky barriers, and work functions; Tin; TiN metal gate; Transistors
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2011.11.015

► This work studies the GIDL current in MuGFET structures with TiN/high-k as gate stack. ► Thicker TiN and high-k dielectrics showed smaller GIDL current. ► Narrow fins exhibit reduced GIDL in spite of the larger vertical electric field. ► Enhanced GIDL can be achieved with pMuGFET structures. This work studies the gate-induced drain leakage (GIDL) in p- and n-MuGFET structures with different TiN metal gate thickness and high-k gate dielectrics. As a result of this analysis, it was observed that a thinner TiN metal gate showed a larger GIDL due to the different gate oxide thickness and a reduced metal gate work function. In addition, replacing SiON by a high-k dielectric (HfSiON) results for nMuGFETs in a decrease of the GIDL. On the other hand, the impact of the gate dielectric on the GIDL for p- channel MuGFETs is marginal. The effect of the channel width was also studied, whereby narrow fin devices exhibit a reduced GIDL current in spite of the larger vertical electric field expected for these devices. Finally, comparing the effect of the channel type, an enhanced GIDL current for pMuGFET devices was observed.