Thermoluminescence kinetics of oxygen-related centers in AlN single crystals

Excitation and emission spectra of thermoluminescence (TL) in bulk aluminum nitride single crystals irradiated by UV have been studied. TL has been found to be most effectively excited by the 5.04eV photons. The 3.44eV band caused by recombination processes with oxygen–vacancy (VAl−ON)-centers domin...

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Bibliographic Details
Published in:Diamond and related materials 2012-05, Vol.25, p.59-62
Main Authors: Weinstein, I.A., Vokhmintsev, A.S., Spiridonov, D.M.
Format: Article
Language:English
Subjects:
Aluminum nitride
Band spectra
Excitation
General order kinetics
Lattice vacancies
Nitrogen vacancy
Optical properties
Oxygen impurity
Photons
Regularity
Single crystals
Termally stimulated luminescence
Thermoluminescence
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Summary:Excitation and emission spectra of thermoluminescence (TL) in bulk aluminum nitride single crystals irradiated by UV have been studied. TL has been found to be most effectively excited by the 5.04eV photons. The 3.44eV band caused by recombination processes with oxygen–vacancy (VAl−ON)-centers dominates in the TL spectrum. Besides, the 2.91 and 2.0eV emissions have been also observed. The TL mechanisms have been quantitatively analyzed in terms of formal kinetics of general order. On the basis of the obtained values and from their comparison with literature data it has been concluded that the main traps of charge carriers, responsible for the TL peak at 470К, are formed by the VN vacancy. To interpret the observed regularities, the model of TL has been proposed, which satisfactorily agrees with independent data for thermally and optically stimulated processes in aluminum nitride. [Display omitted] ► 3D plots of thermoluminescence emission and excitation spectra in bulk AlN under UV. ► Comprehensive analysis of glow curves in terms of formal general order kinetics. ► We propose the band model of TL processes with VN-traps and (VAl–ON)-complexes.
ISSN:0925-9635
1879-0062
DOI:10.1016/j.diamond.2012.02.004