Modeling Nonlinear Dark Current Behavior in CCDs

A model explaining nonlinear time dependence of pixels in charge-coupled device (CCD) pixels is presented. The model describes the movement of the pixel's depletion edge based on varying quantities of signal charge. Dynamic depletion edges will affect dark current collected by pixels with impur...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2012-04, Vol.59 (4), p.1114-1122
Main Authors: Dunlap, J. C., Blouke, M. M., Bodegom, E., Widenhorn, R.
Format: Article
Language:English
Subjects:
Applied sciences
Charge coupled devices
Charge transfer devices
Charge-coupled devices (CCDs)
Dark current
Data models
Depletion
depletion edge
Electronics
Equations
Exact sciences and technology
exposure time nonlinearity
Image edge detection
Imaging devices
Impurities
Mathematical models
Movement
Nonlinearity
Pixels
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
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Description
Summary:A model explaining nonlinear time dependence of pixels in charge-coupled device (CCD) pixels is presented. The model describes the movement of the pixel's depletion edge based on varying quantities of signal charge. Dynamic depletion edges will affect dark current collected by pixels with impurities located in the region of movement of the edge. The model attempts to address nonlinear behavior of dark current with respect to exposure time well below the saturation level seen in some CCD imagers. Modeling an imager by giving pixels varying number of impurities and depths of those impurities, assuming a uniform distribution, leads to characteristic behavior observed in the imagers.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2012.2183000