Characteristics of IGZO TFT Prepared by Atmospheric Pressure Plasma Jet Using PE-ALD hbox Al 2 hbox O 3 Gate Dielectric

This letter proposes a novel atmospheric pressure plasma jet (APPJ) method for indium-gallium-zinc-oxide (IGZO) deposition and use of the plasma-enhanced atomic layer deposition (PE-ALD) hbox Al 2 hbox O 3 as gate dielectric. A nonvacuum and simple APPJ system was demonstrated for channel material d...

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Bibliographic Details
Published in:IEEE electron device letters 2012-04, Vol.33 (4), p.552-554
Main Authors: Wu, Chien-Hung, Chang, Kow-Ming, Huang, Sung-Hung, Deng, I-Chung, Wu, Chin-Jyi, Chiang, Wei-Han, Chang, Chia-Chiang
Format: Article
Language:English
Subjects:
Aluminum
Atmospheric pressure
Barometric pressure
Channels
Deposition
Dielectrics
Gates
Thin films
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Summary:This letter proposes a novel atmospheric pressure plasma jet (APPJ) method for indium-gallium-zinc-oxide (IGZO) deposition and use of the plasma-enhanced atomic layer deposition (PE-ALD) hbox Al 2 hbox O 3 as gate dielectric. A nonvacuum and simple APPJ system was demonstrated for channel material deposition. High-transmittance nanocrystalline IGZO thin films were obtained. Excellent electrical characteristics were achieved, including a low V T of 0.71 V, a small subthreshold swing of 276 mV/dec, a mobility of 8.39 hbox cm 2 / ( hbox V times hbox s ) , and a large I rm on / I rm off ratio of hbox 1 hbox 10 8 .
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2012.2185774