High performance MIM capacitor using anodic alumina dielectric

• Published in: Microelectronic engineering 2012-02, Vol.90 (Feb), p.12-14
• Main Authors: Hourdakis, E., Nassiopoulou, A.G.
• Format: Article
• Language: English
• Subjects: Aluminum oxide; Anodic; Applied sciences; Barriers; Capacitance; Capacitor; Capacitors; Compound structure devices; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Density; Design. Technologies. Operation analysis. Testing; Dielectric, amorphous and glass solid devices; Dielectrics; Electrodes; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in interface structures; Electronics; Exact sciences and technology; High-k; Integrated circuits; Metal-nonmetal contacts; MIM; Physics; Porous anodic aloumina; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/j.mee.2011.03.020

[Display omitted] ► Demonstrated high performance Al/barrier-type anodic Al2O3/Al MIM capacitor. ► The fabrication process is at room temperature, CMOS compatible and low cost. ► Demonstrated capacitance density of 7 fF/μm2 that meets ITRS requirements. ► Improved coefficient α compared to a MIM capacitor with porous Al2O3 dielectric. We report on the fabrication and electrical characterization of MIM capacitors using barrier type anodic alumina dielectric between Al electrodes. Its fabrication is based on CMOS compatible room temperature processing using electrochemistry which is a simple and cost effective process. The obtained capacitors exhibit large capacitance density (above 7fF/μm2) and very small leakage current for a voltage range between −2V and 2V (below the background noise of our measurement system). The electrical characteristics of the capacitor are directly compared to those attained previously by the authors using porous anodic alumina instead of the barrier type one. It is shown that there is a significant improvement in both the value of the capacitance density and the value of the non-linearity coefficient α.