A study of the effect of post-metal etch wet cleaning processes and silicon oxynitride film on charge induced corrosion of tungsten vias

We report the experimental study of prevention of charge induced corrosion of tungsten vias after metal etch using wet chemical solutions and silicon oxynitride (SiON) shielding film. It was found that one of the solutions could effectively prevent corrosion of tungsten vias and leave essentially no...

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Bibliographic Details
Published in:Materials science in semiconductor processing 2010-12, Vol.13 (5), p.315-319
Main Authors: Lee, Szetsen, Ni, Chi-Jung
Format: Article
Language:English
Subjects:
Applied sciences
Charge
Charge-induced corrosion
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Corrosion
Corrosion mechanisms
Corrosion tests
Cross-disciplinary physics: materials science
rheology
Dielectric thin films
Dielectrics, piezoelectrics, and ferroelectrics and their properties
End point
Etching (metallography)
Exact sciences and technology
Materials science
Metals. Metallurgy
Other materials
Physics
Semiconductors
Shielding
Silicon oxynitride
Specific materials
Tungsten
Tungsten via
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Summary:We report the experimental study of prevention of charge induced corrosion of tungsten vias after metal etch using wet chemical solutions and silicon oxynitride (SiON) shielding film. It was found that one of the solutions could effectively prevent corrosion of tungsten vias and leave essentially no polymer residue on metal lines. The performance of other solutions is poor due to the formation of polymer residues or sidewall erosion on metal lines. We have demonstrated that the combination of wet chemical treatment with SiON as the dielectric charge shielding film was as effective as other standard methods for preventing corrosion of tungsten vias. It was also found that SiON has strong impacts on chamber wall conditions and metal line profile.
ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2011.02.011