Influence of annealing temperature on field emission from tetrapod-shaped ZnO-whisker films obtained by screen printing

• Published in: Materials science in semiconductor processing 2010-12, Vol.13 (5), p.400-404
• Main Authors: Fan, X.M., Zhang, H.G., Wang, J., Zhou, Z.W.
• Format: Article
• Language: English
• Subjects: Annealing; Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Current density; Electron and ion emission by liquids and solids; impact phenomena; Electronics; Emitters; Exact sciences and technology; Field emission; Field emission, ionization, evaporation, and desorption; Field enhancement factor; Heat treatment; Indium tin oxide; Materials science; Metals. Metallurgy; Microstructure; Physics; Production techniques; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductors; Solid surfaces and solid-solid interfaces; Surface structure and topography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Vacuum microelectronics; X-ray diffraction; ZnO whisker
• ISSN: 1369-8001; 1873-4081
• DOI: 10.1016/j.mssp.2011.05.012

Tetrapod-shaped zinc oxide whisker-film emitters were fabricated on indium tin oxide glass substrates using a screen-printing method. The influence of annealing temperature on field emission of tetrapod-whisker ZnO-based emitters was investigated. X-ray diffraction and scanning electronic microscopy were applied to characterize the structure and the surface morphology of the deposited films. It was found that ZnO-based emitters annealed at 250 °C have the best field emission properties with the lowest turn-on field of 2.6 V/μm at a current density of 1 μA/cm 2, the lowest threshold field of 5.2 V/μm at a current density of 1 mA/cm 2 and high field emission enhancement factor of 4129. Moreover, films with homogeneous, fine and dense light spots with low emission current fluctuation of 1.7% were obtained from samples annealed at 250 °C. ► TW-ZnO-based emitters fabricated by screen-printing method. ► Annealing temperature influences field emission properties. ► The highest field emission enhancement factor was obtained at about 250 °C annealing. ► Annealing temperature influences light spots density and emission current fluctuation.