An analysis of trace metal contaminants on silicon surface by VPD-ToF-SIMS and VPD-SIMS: towards 1E6-1E7at/cm2 detection limits

VPD-SIMS and VPD-TOFSIMS are used to detect ultra low level of metallic contaminants on silicon wafer surface. The combination of Secondary Ion Mass Spectrometry (SIMS) high sensitivity and Vapor Phase Decomposition (VPD) is capable to provide quantitative detection of metals with sub-107 at/cm2 det...

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Bibliographic Details
Published in:Surface and interface analysis 2011-01, Vol.43 (1-2), p.582-585
Main Authors: Juhel, Marc, Trouiller, Chantal, Guiheux, Denis, Arsac, Cyril, Drogue, Nathalie, Couvrat, Stephanie, Grosjean, Catherine
Format: Article
Language:English
Subjects:
Contaminants
Interface analysis
Low level
Secondary ion mass spectrometry
Semiconductors
Silicon
Wafers
X-ray fluorescence
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Summary:VPD-SIMS and VPD-TOFSIMS are used to detect ultra low level of metallic contaminants on silicon wafer surface. The combination of Secondary Ion Mass Spectrometry (SIMS) high sensitivity and Vapor Phase Decomposition (VPD) is capable to provide quantitative detection of metals with sub-107 at/cm2 detection limits on 200 mm and 300 mm silicon wafers surface. The quantification is validated by a correlation with Total X Ray Fluorescence (TXRF) measurements. This study sets down the quantification problematic and describes the protocol that was developed for the analysis and quantification. This complementary technique to VPD-TXRF improves the detection of metallic contamination on silicon surface for the most advanced semiconductor technology.
ISSN:1096-9918
DOI:10.1002/sia.3428