Investigation of charge trapping and breakdown characteristics of sputtered-Y2O3 on n-GaAs substrates

Metal-oxide-semiconductor (MOS) capacitors fabricated by depositing yttrium oxide (Y2O3) using radio frequency sputtering system on top of n-GaAs substrates have been investigated. To study the interface properties, charge trapping behavior and breakdown characteristics of Y2O3 gate dielectric, the...

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Bibliographic Details
Published in:Thin solid films 2011-10, Vol.520 (1), p.47-52
Main Authors: DAS, P. S, BISWAS, Abhijit
Format: Article
Language:English
Subjects:
Charge
Cross-disciplinary physics: materials science
rheology
Deposition by sputtering
Dielectric breakdown
Electric potential
Exact sciences and technology
Gates
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Stresses
Trapping
Voltage
Yttrium oxide
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Summary:Metal-oxide-semiconductor (MOS) capacitors fabricated by depositing yttrium oxide (Y2O3) using radio frequency sputtering system on top of n-GaAs substrates have been investigated. To study the interface properties, charge trapping behavior and breakdown characteristics of Y2O3 gate dielectric, the MOS capacitors were subjected to constant current stress, high pulse voltage stress and high constant voltage stress. The average value of the cross section of generated traps during electrical stress has been determined from our experimental data. Further the trap charge density, its distribution and location have been investigated by measurements on application and subsequent withdrawal of high pulse voltage stress. Additionally, stress induced leakage current density and time dependent dielectric breakdown characteristics have been obtained and time-to-breakdown exceeding 840s is observed for Y2O3 gate dielectrics directly deposited on n-GaAs. Our experimental results have been analyzed with simple analytical formulae available in the literature.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2011.06.032