Piezoelectric Disk Resonators Based on Epitaxial AlGaAs Films

A new design for anisotropic piezoelectric disk resonators is demonstrated using single-crystal Al 0.3 Ga 0.7 As films. The shape of the disk resonator is based on the velocity propagation profile of the elastic wave in the plane of the piezoelectric film, with lateral dimensions scaled to the half...

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Bibliographic Details
Published in:Journal of microelectromechanical systems 2007-02, Vol.16 (1), p.155-162
Main Authors: Deng, K., Kumar, P., Lihua Li, DeVoe, D.L.
Format: Article
Language:English
Subjects:
AlGaAs
Aluminum gallium arsenides
Anisotropic magnetoresistance
Applied sciences
Boundary conditions
Circuit properties
Design engineering
Disks
Elastic waves
Electric, optical and optoelectronic circuits
Electrical resistance measurement
Electrodes
Electronics
Exact sciences and technology
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Mathematical models
Mechanical instruments, equipment and techniques
Micromechanical devices and systems
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Physics
Piezoelectric films
piezoelectric resonator
Piezoelectricity
Prototypes
Q factor
radio-frequency (RF) microelectromechanical systems (MEMS)
Resonance
Resonant frequency
Resonators
Shape
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Summary:A new design for anisotropic piezoelectric disk resonators is demonstrated using single-crystal Al 0.3 Ga 0.7 As films. The shape of the disk resonator is based on the velocity propagation profile of the elastic wave in the plane of the piezoelectric film, with lateral dimensions scaled to the half wavelength of the desired resonance frequency. The resonators are designed with supports which emulate free-free boundary conditions. Prototype resonators are fabricated using a three-layer Al 0.3 Ga 0.7 As heterostructure containing silicon-doped electrodes and an undoped piezoelectric Al 0.3 Ga 0.7 As layer. Quality factors as high as 11 200 are measured in air for a 23.25 MHz fundamental resonant mode, with a corresponding motional resistance of 1.67 kOmega. A finite-element model for the resonator design is also described. Simulation results agree well with both theoretical calculations and experimental data
ISSN:1057-7157
1941-0158
DOI:10.1109/JMEMS.2006.886006