Loading…

Piezoelectric Disk Resonators Based on Epitaxial AlGaAs Films

A new design for anisotropic piezoelectric disk resonators is demonstrated using single-crystal Al 0.3 Ga 0.7 As films. The shape of the disk resonator is based on the velocity propagation profile of the elastic wave in the plane of the piezoelectric film, with lateral dimensions scaled to the half...

Full description

Saved in:
Bibliographic Details
Published in:Journal of microelectromechanical systems 2007-02, Vol.16 (1), p.155-162
Main Authors: Deng, K., Kumar, P., Lihua Li, DeVoe, D.L.
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c450t-7680ee843898d1ab380a1362a4ab9cb8c6dec70364a740ef19f5e8e6c223c9313
cites cdi_FETCH-LOGICAL-c450t-7680ee843898d1ab380a1362a4ab9cb8c6dec70364a740ef19f5e8e6c223c9313
container_end_page 162
container_issue 1
container_start_page 155
container_title Journal of microelectromechanical systems
container_volume 16
creator Deng, K.
Kumar, P.
Lihua Li
DeVoe, D.L.
description A new design for anisotropic piezoelectric disk resonators is demonstrated using single-crystal Al 0.3 Ga 0.7 As films. The shape of the disk resonator is based on the velocity propagation profile of the elastic wave in the plane of the piezoelectric film, with lateral dimensions scaled to the half wavelength of the desired resonance frequency. The resonators are designed with supports which emulate free-free boundary conditions. Prototype resonators are fabricated using a three-layer Al 0.3 Ga 0.7 As heterostructure containing silicon-doped electrodes and an undoped piezoelectric Al 0.3 Ga 0.7 As layer. Quality factors as high as 11 200 are measured in air for a 23.25 MHz fundamental resonant mode, with a corresponding motional resistance of 1.67 kOmega. A finite-element model for the resonator design is also described. Simulation results agree well with both theoretical calculations and experimental data
doi_str_mv 10.1109/JMEMS.2006.886006
format article
fullrecord <record><control><sourceid>proquest_pasca</sourceid><recordid>TN_cdi_proquest_miscellaneous_1022896974</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4099363</ieee_id><sourcerecordid>1022896974</sourcerecordid><originalsourceid>FETCH-LOGICAL-c450t-7680ee843898d1ab380a1362a4ab9cb8c6dec70364a740ef19f5e8e6c223c9313</originalsourceid><addsrcrecordid>eNqFkctLJDEQxoO4oM7uH7B4aQQfl56tPDqPg4dxHF8oyqrnJpOphmhP95j0gO5fb9oRhT0odaiC_L6PqnyE_KYwpBTMn4urydXtkAHIodYytTWySY2gOdBCr6cZCpUrWqgNshXjAwAVQstNcnjj8V-LNboueJcd-_iY_cXYNrZrQ8yObMRZ1jbZZOE7--xtnY3qUzuK2Ymv5_En-VHZOuKv9z4g9yeTu_FZfnl9ej4eXeZOFNDlSmpA1IJro2fUTrkGS7lkVtipcVPt5AydAi6FVQKwoqYqUKN0jHFnOOUDsr_yXYT2aYmxK-c-Oqxr22C7jKXptSAE-5bURjLQaZVE7n1JciG4oqq3PPgSpMBYsjVKJHTnP_ShXYYmfU1paDqGm1QDQleQC22MAatyEfzchpfkVPZhlm9hln2Y5SrMpNl9N7bR2boKtnE-fgp1wY1m_QLbK84j4sezAGO45PwV7Fukgw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>912233939</pqid></control><display><type>article</type><title>Piezoelectric Disk Resonators Based on Epitaxial AlGaAs Films</title><source>IEEE Electronic Library (IEL) Journals</source><creator>Deng, K. ; Kumar, P. ; Lihua Li ; DeVoe, D.L.</creator><creatorcontrib>Deng, K. ; Kumar, P. ; Lihua Li ; DeVoe, D.L.</creatorcontrib><description>A new design for anisotropic piezoelectric disk resonators is demonstrated using single-crystal Al 0.3 Ga 0.7 As films. The shape of the disk resonator is based on the velocity propagation profile of the elastic wave in the plane of the piezoelectric film, with lateral dimensions scaled to the half wavelength of the desired resonance frequency. The resonators are designed with supports which emulate free-free boundary conditions. Prototype resonators are fabricated using a three-layer Al 0.3 Ga 0.7 As heterostructure containing silicon-doped electrodes and an undoped piezoelectric Al 0.3 Ga 0.7 As layer. Quality factors as high as 11 200 are measured in air for a 23.25 MHz fundamental resonant mode, with a corresponding motional resistance of 1.67 kOmega. A finite-element model for the resonator design is also described. Simulation results agree well with both theoretical calculations and experimental data</description><identifier>ISSN: 1057-7157</identifier><identifier>EISSN: 1941-0158</identifier><identifier>DOI: 10.1109/JMEMS.2006.886006</identifier><identifier>CODEN: JMIYET</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>AlGaAs ; Aluminum gallium arsenides ; Anisotropic magnetoresistance ; Applied sciences ; Boundary conditions ; Circuit properties ; Design engineering ; Disks ; Elastic waves ; Electric, optical and optoelectronic circuits ; Electrical resistance measurement ; Electrodes ; Electronics ; Exact sciences and technology ; Instruments, apparatus, components and techniques common to several branches of physics and astronomy ; Mathematical models ; Mechanical instruments, equipment and techniques ; Micromechanical devices and systems ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; Physics ; Piezoelectric films ; piezoelectric resonator ; Piezoelectricity ; Prototypes ; Q factor ; radio-frequency (RF) microelectromechanical systems (MEMS) ; Resonance ; Resonant frequency ; Resonators ; Shape</subject><ispartof>Journal of microelectromechanical systems, 2007-02, Vol.16 (1), p.155-162</ispartof><rights>2007 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2007</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c450t-7680ee843898d1ab380a1362a4ab9cb8c6dec70364a740ef19f5e8e6c223c9313</citedby><cites>FETCH-LOGICAL-c450t-7680ee843898d1ab380a1362a4ab9cb8c6dec70364a740ef19f5e8e6c223c9313</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4099363$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=18539824$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Deng, K.</creatorcontrib><creatorcontrib>Kumar, P.</creatorcontrib><creatorcontrib>Lihua Li</creatorcontrib><creatorcontrib>DeVoe, D.L.</creatorcontrib><title>Piezoelectric Disk Resonators Based on Epitaxial AlGaAs Films</title><title>Journal of microelectromechanical systems</title><addtitle>JMEMS</addtitle><description>A new design for anisotropic piezoelectric disk resonators is demonstrated using single-crystal Al 0.3 Ga 0.7 As films. The shape of the disk resonator is based on the velocity propagation profile of the elastic wave in the plane of the piezoelectric film, with lateral dimensions scaled to the half wavelength of the desired resonance frequency. The resonators are designed with supports which emulate free-free boundary conditions. Prototype resonators are fabricated using a three-layer Al 0.3 Ga 0.7 As heterostructure containing silicon-doped electrodes and an undoped piezoelectric Al 0.3 Ga 0.7 As layer. Quality factors as high as 11 200 are measured in air for a 23.25 MHz fundamental resonant mode, with a corresponding motional resistance of 1.67 kOmega. A finite-element model for the resonator design is also described. Simulation results agree well with both theoretical calculations and experimental data</description><subject>AlGaAs</subject><subject>Aluminum gallium arsenides</subject><subject>Anisotropic magnetoresistance</subject><subject>Applied sciences</subject><subject>Boundary conditions</subject><subject>Circuit properties</subject><subject>Design engineering</subject><subject>Disks</subject><subject>Elastic waves</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electrical resistance measurement</subject><subject>Electrodes</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</subject><subject>Mathematical models</subject><subject>Mechanical instruments, equipment and techniques</subject><subject>Micromechanical devices and systems</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Physics</subject><subject>Piezoelectric films</subject><subject>piezoelectric resonator</subject><subject>Piezoelectricity</subject><subject>Prototypes</subject><subject>Q factor</subject><subject>radio-frequency (RF) microelectromechanical systems (MEMS)</subject><subject>Resonance</subject><subject>Resonant frequency</subject><subject>Resonators</subject><subject>Shape</subject><issn>1057-7157</issn><issn>1941-0158</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNqFkctLJDEQxoO4oM7uH7B4aQQfl56tPDqPg4dxHF8oyqrnJpOphmhP95j0gO5fb9oRhT0odaiC_L6PqnyE_KYwpBTMn4urydXtkAHIodYytTWySY2gOdBCr6cZCpUrWqgNshXjAwAVQstNcnjj8V-LNboueJcd-_iY_cXYNrZrQ8yObMRZ1jbZZOE7--xtnY3qUzuK2Ymv5_En-VHZOuKv9z4g9yeTu_FZfnl9ej4eXeZOFNDlSmpA1IJro2fUTrkGS7lkVtipcVPt5AydAi6FVQKwoqYqUKN0jHFnOOUDsr_yXYT2aYmxK-c-Oqxr22C7jKXptSAE-5bURjLQaZVE7n1JciG4oqq3PPgSpMBYsjVKJHTnP_ShXYYmfU1paDqGm1QDQleQC22MAatyEfzchpfkVPZhlm9hln2Y5SrMpNl9N7bR2boKtnE-fgp1wY1m_QLbK84j4sezAGO45PwV7Fukgw</recordid><startdate>20070201</startdate><enddate>20070201</enddate><creator>Deng, K.</creator><creator>Kumar, P.</creator><creator>Lihua Li</creator><creator>DeVoe, D.L.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7TB</scope><scope>7U5</scope><scope>8FD</scope><scope>FR3</scope><scope>L7M</scope><scope>7QF</scope><scope>7QQ</scope><scope>F28</scope><scope>JG9</scope></search><sort><creationdate>20070201</creationdate><title>Piezoelectric Disk Resonators Based on Epitaxial AlGaAs Films</title><author>Deng, K. ; Kumar, P. ; Lihua Li ; DeVoe, D.L.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c450t-7680ee843898d1ab380a1362a4ab9cb8c6dec70364a740ef19f5e8e6c223c9313</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>AlGaAs</topic><topic>Aluminum gallium arsenides</topic><topic>Anisotropic magnetoresistance</topic><topic>Applied sciences</topic><topic>Boundary conditions</topic><topic>Circuit properties</topic><topic>Design engineering</topic><topic>Disks</topic><topic>Elastic waves</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electrical resistance measurement</topic><topic>Electrodes</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</topic><topic>Mathematical models</topic><topic>Mechanical instruments, equipment and techniques</topic><topic>Micromechanical devices and systems</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>Physics</topic><topic>Piezoelectric films</topic><topic>piezoelectric resonator</topic><topic>Piezoelectricity</topic><topic>Prototypes</topic><topic>Q factor</topic><topic>radio-frequency (RF) microelectromechanical systems (MEMS)</topic><topic>Resonance</topic><topic>Resonant frequency</topic><topic>Resonators</topic><topic>Shape</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Deng, K.</creatorcontrib><creatorcontrib>Kumar, P.</creatorcontrib><creatorcontrib>Lihua Li</creatorcontrib><creatorcontrib>DeVoe, D.L.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Xplore</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics &amp; Communications Abstracts</collection><collection>Mechanical &amp; Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Aluminium Industry Abstracts</collection><collection>Ceramic Abstracts</collection><collection>ANTE: Abstracts in New Technology &amp; Engineering</collection><collection>Materials Research Database</collection><jtitle>Journal of microelectromechanical systems</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Deng, K.</au><au>Kumar, P.</au><au>Lihua Li</au><au>DeVoe, D.L.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Piezoelectric Disk Resonators Based on Epitaxial AlGaAs Films</atitle><jtitle>Journal of microelectromechanical systems</jtitle><stitle>JMEMS</stitle><date>2007-02-01</date><risdate>2007</risdate><volume>16</volume><issue>1</issue><spage>155</spage><epage>162</epage><pages>155-162</pages><issn>1057-7157</issn><eissn>1941-0158</eissn><coden>JMIYET</coden><abstract>A new design for anisotropic piezoelectric disk resonators is demonstrated using single-crystal Al 0.3 Ga 0.7 As films. The shape of the disk resonator is based on the velocity propagation profile of the elastic wave in the plane of the piezoelectric film, with lateral dimensions scaled to the half wavelength of the desired resonance frequency. The resonators are designed with supports which emulate free-free boundary conditions. Prototype resonators are fabricated using a three-layer Al 0.3 Ga 0.7 As heterostructure containing silicon-doped electrodes and an undoped piezoelectric Al 0.3 Ga 0.7 As layer. Quality factors as high as 11 200 are measured in air for a 23.25 MHz fundamental resonant mode, with a corresponding motional resistance of 1.67 kOmega. A finite-element model for the resonator design is also described. Simulation results agree well with both theoretical calculations and experimental data</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/JMEMS.2006.886006</doi><tpages>8</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1057-7157
ispartof Journal of microelectromechanical systems, 2007-02, Vol.16 (1), p.155-162
issn 1057-7157
1941-0158
language eng
recordid cdi_proquest_miscellaneous_1022896974
source IEEE Electronic Library (IEL) Journals
subjects AlGaAs
Aluminum gallium arsenides
Anisotropic magnetoresistance
Applied sciences
Boundary conditions
Circuit properties
Design engineering
Disks
Elastic waves
Electric, optical and optoelectronic circuits
Electrical resistance measurement
Electrodes
Electronics
Exact sciences and technology
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Mathematical models
Mechanical instruments, equipment and techniques
Micromechanical devices and systems
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Physics
Piezoelectric films
piezoelectric resonator
Piezoelectricity
Prototypes
Q factor
radio-frequency (RF) microelectromechanical systems (MEMS)
Resonance
Resonant frequency
Resonators
Shape
title Piezoelectric Disk Resonators Based on Epitaxial AlGaAs Films
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T15%3A36%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pasca&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Piezoelectric%20Disk%20Resonators%20Based%20on%20Epitaxial%20AlGaAs%20Films&rft.jtitle=Journal%20of%20microelectromechanical%20systems&rft.au=Deng,%20K.&rft.date=2007-02-01&rft.volume=16&rft.issue=1&rft.spage=155&rft.epage=162&rft.pages=155-162&rft.issn=1057-7157&rft.eissn=1941-0158&rft.coden=JMIYET&rft_id=info:doi/10.1109/JMEMS.2006.886006&rft_dat=%3Cproquest_pasca%3E1022896974%3C/proquest_pasca%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c450t-7680ee843898d1ab380a1362a4ab9cb8c6dec70364a740ef19f5e8e6c223c9313%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=912233939&rft_id=info:pmid/&rft_ieee_id=4099363&rfr_iscdi=true