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Piezoelectric Disk Resonators Based on Epitaxial AlGaAs Films
A new design for anisotropic piezoelectric disk resonators is demonstrated using single-crystal Al 0.3 Ga 0.7 As films. The shape of the disk resonator is based on the velocity propagation profile of the elastic wave in the plane of the piezoelectric film, with lateral dimensions scaled to the half...
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Published in: | Journal of microelectromechanical systems 2007-02, Vol.16 (1), p.155-162 |
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creator | Deng, K. Kumar, P. Lihua Li DeVoe, D.L. |
description | A new design for anisotropic piezoelectric disk resonators is demonstrated using single-crystal Al 0.3 Ga 0.7 As films. The shape of the disk resonator is based on the velocity propagation profile of the elastic wave in the plane of the piezoelectric film, with lateral dimensions scaled to the half wavelength of the desired resonance frequency. The resonators are designed with supports which emulate free-free boundary conditions. Prototype resonators are fabricated using a three-layer Al 0.3 Ga 0.7 As heterostructure containing silicon-doped electrodes and an undoped piezoelectric Al 0.3 Ga 0.7 As layer. Quality factors as high as 11 200 are measured in air for a 23.25 MHz fundamental resonant mode, with a corresponding motional resistance of 1.67 kOmega. A finite-element model for the resonator design is also described. Simulation results agree well with both theoretical calculations and experimental data |
doi_str_mv | 10.1109/JMEMS.2006.886006 |
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The shape of the disk resonator is based on the velocity propagation profile of the elastic wave in the plane of the piezoelectric film, with lateral dimensions scaled to the half wavelength of the desired resonance frequency. The resonators are designed with supports which emulate free-free boundary conditions. Prototype resonators are fabricated using a three-layer Al 0.3 Ga 0.7 As heterostructure containing silicon-doped electrodes and an undoped piezoelectric Al 0.3 Ga 0.7 As layer. Quality factors as high as 11 200 are measured in air for a 23.25 MHz fundamental resonant mode, with a corresponding motional resistance of 1.67 kOmega. A finite-element model for the resonator design is also described. Simulation results agree well with both theoretical calculations and experimental data</description><identifier>ISSN: 1057-7157</identifier><identifier>EISSN: 1941-0158</identifier><identifier>DOI: 10.1109/JMEMS.2006.886006</identifier><identifier>CODEN: JMIYET</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>AlGaAs ; Aluminum gallium arsenides ; Anisotropic magnetoresistance ; Applied sciences ; Boundary conditions ; Circuit properties ; Design engineering ; Disks ; Elastic waves ; Electric, optical and optoelectronic circuits ; Electrical resistance measurement ; Electrodes ; Electronics ; Exact sciences and technology ; Instruments, apparatus, components and techniques common to several branches of physics and astronomy ; Mathematical models ; Mechanical instruments, equipment and techniques ; Micromechanical devices and systems ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; Physics ; Piezoelectric films ; piezoelectric resonator ; Piezoelectricity ; Prototypes ; Q factor ; radio-frequency (RF) microelectromechanical systems (MEMS) ; Resonance ; Resonant frequency ; Resonators ; Shape</subject><ispartof>Journal of microelectromechanical systems, 2007-02, Vol.16 (1), p.155-162</ispartof><rights>2007 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2007</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c450t-7680ee843898d1ab380a1362a4ab9cb8c6dec70364a740ef19f5e8e6c223c9313</citedby><cites>FETCH-LOGICAL-c450t-7680ee843898d1ab380a1362a4ab9cb8c6dec70364a740ef19f5e8e6c223c9313</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4099363$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18539824$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Deng, K.</creatorcontrib><creatorcontrib>Kumar, P.</creatorcontrib><creatorcontrib>Lihua Li</creatorcontrib><creatorcontrib>DeVoe, D.L.</creatorcontrib><title>Piezoelectric Disk Resonators Based on Epitaxial AlGaAs Films</title><title>Journal of microelectromechanical systems</title><addtitle>JMEMS</addtitle><description>A new design for anisotropic piezoelectric disk resonators is demonstrated using single-crystal Al 0.3 Ga 0.7 As films. The shape of the disk resonator is based on the velocity propagation profile of the elastic wave in the plane of the piezoelectric film, with lateral dimensions scaled to the half wavelength of the desired resonance frequency. The resonators are designed with supports which emulate free-free boundary conditions. Prototype resonators are fabricated using a three-layer Al 0.3 Ga 0.7 As heterostructure containing silicon-doped electrodes and an undoped piezoelectric Al 0.3 Ga 0.7 As layer. Quality factors as high as 11 200 are measured in air for a 23.25 MHz fundamental resonant mode, with a corresponding motional resistance of 1.67 kOmega. A finite-element model for the resonator design is also described. Simulation results agree well with both theoretical calculations and experimental data</description><subject>AlGaAs</subject><subject>Aluminum gallium arsenides</subject><subject>Anisotropic magnetoresistance</subject><subject>Applied sciences</subject><subject>Boundary conditions</subject><subject>Circuit properties</subject><subject>Design engineering</subject><subject>Disks</subject><subject>Elastic waves</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electrical resistance measurement</subject><subject>Electrodes</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</subject><subject>Mathematical models</subject><subject>Mechanical instruments, equipment and techniques</subject><subject>Micromechanical devices and systems</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Physics</subject><subject>Piezoelectric films</subject><subject>piezoelectric resonator</subject><subject>Piezoelectricity</subject><subject>Prototypes</subject><subject>Q factor</subject><subject>radio-frequency (RF) microelectromechanical systems (MEMS)</subject><subject>Resonance</subject><subject>Resonant frequency</subject><subject>Resonators</subject><subject>Shape</subject><issn>1057-7157</issn><issn>1941-0158</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNqFkctLJDEQxoO4oM7uH7B4aQQfl56tPDqPg4dxHF8oyqrnJpOphmhP95j0gO5fb9oRhT0odaiC_L6PqnyE_KYwpBTMn4urydXtkAHIodYytTWySY2gOdBCr6cZCpUrWqgNshXjAwAVQstNcnjj8V-LNboueJcd-_iY_cXYNrZrQ8yObMRZ1jbZZOE7--xtnY3qUzuK2Ymv5_En-VHZOuKv9z4g9yeTu_FZfnl9ej4eXeZOFNDlSmpA1IJro2fUTrkGS7lkVtipcVPt5AydAi6FVQKwoqYqUKN0jHFnOOUDsr_yXYT2aYmxK-c-Oqxr22C7jKXptSAE-5bURjLQaZVE7n1JciG4oqq3PPgSpMBYsjVKJHTnP_ShXYYmfU1paDqGm1QDQleQC22MAatyEfzchpfkVPZhlm9hln2Y5SrMpNl9N7bR2boKtnE-fgp1wY1m_QLbK84j4sezAGO45PwV7Fukgw</recordid><startdate>20070201</startdate><enddate>20070201</enddate><creator>Deng, K.</creator><creator>Kumar, P.</creator><creator>Lihua Li</creator><creator>DeVoe, D.L.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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The shape of the disk resonator is based on the velocity propagation profile of the elastic wave in the plane of the piezoelectric film, with lateral dimensions scaled to the half wavelength of the desired resonance frequency. The resonators are designed with supports which emulate free-free boundary conditions. Prototype resonators are fabricated using a three-layer Al 0.3 Ga 0.7 As heterostructure containing silicon-doped electrodes and an undoped piezoelectric Al 0.3 Ga 0.7 As layer. Quality factors as high as 11 200 are measured in air for a 23.25 MHz fundamental resonant mode, with a corresponding motional resistance of 1.67 kOmega. A finite-element model for the resonator design is also described. Simulation results agree well with both theoretical calculations and experimental data</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/JMEMS.2006.886006</doi><tpages>8</tpages></addata></record> |
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subjects | AlGaAs Aluminum gallium arsenides Anisotropic magnetoresistance Applied sciences Boundary conditions Circuit properties Design engineering Disks Elastic waves Electric, optical and optoelectronic circuits Electrical resistance measurement Electrodes Electronics Exact sciences and technology Instruments, apparatus, components and techniques common to several branches of physics and astronomy Mathematical models Mechanical instruments, equipment and techniques Micromechanical devices and systems Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Physics Piezoelectric films piezoelectric resonator Piezoelectricity Prototypes Q factor radio-frequency (RF) microelectromechanical systems (MEMS) Resonance Resonant frequency Resonators Shape |
title | Piezoelectric Disk Resonators Based on Epitaxial AlGaAs Films |
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