60 GHz Optical Carrier Generation Using a Domain Reversed LiNbO Optical Modulator

A 30 GHz bandpass modulator was fabricated on a domain reversed LiNbO 3 substrate. The circuit effect on current waveforms during wafer-scale poling was analyzed, and the domain wall movement was precisely controlled in the poling process. A complementary polarization reversal technique enabled the...

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Bibliographic Details
Published in:Journal of lightwave technology 2008-07, Vol.26 (14), p.2269-2273
Main Authors: Kim, Woo-Kyung, Jeong, Woo-Jin, Kwon, Soon-Woo, Song, Myoung-Keun, Son, Geun-Sik, Yang, Woo-Seok, Lee, Hyung-Man, Lee, Han-Young
Format: Article
Language:English
Subjects:
Carriers
Deoxidizing
Devices
Electrodes
Electrooptic modulation
Frequency
integrated optics
millimeter-wave generation
Modulation
Modulators
Noise levels
Optical attenuators
Optical interferometry
Optical mixing
Optical modulation
Optical noise
Optical polarization
Optical sensors
Optical waveguides
traveling wave
Waveforms
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Summary:A 30 GHz bandpass modulator was fabricated on a domain reversed LiNbO 3 substrate. The circuit effect on current waveforms during wafer-scale poling was analyzed, and the domain wall movement was precisely controlled in the poling process. A complementary polarization reversal technique enabled the device with a single electrode structure to perform balanced modulation. A 60 GHz optical carrier was generated by double sideband modulation with the suppressed carrier. The fabricated device showed that carrier suppression was better than 45 dB and that the power ratio of a 60 GHz spaced two-tone lightwave signal to the suppressed carrier was 35 dB.
ISSN:0733-8724
1558-2213
DOI:10.1109/JLT.2008.922309