An Amorphous Indium-Gallium-Zinc-Oxide Active Matrix Electroluminescent Pixel

In this study, an active matrix pixel was fabricated and characterized using indium gallium zinc oxide (IGZO) thin-film transistors and a novel electroluminescent (EL) Eu:IGZO thin-film phosphor. The results show that even large and unoptimized IGZO devices are capable of modulating at the frequenci...

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Bibliographic Details
Published in:Journal of display technology 2009-12, Vol.5 (12), p.438-445
Main Authors: Wellenius, P., Suresh, A., Haojun Luo, Lunardi, L.M., Muth, J.F.
Format: Article
Language:English
Subjects:
Active matrix technology
Amorphous materials
Amorphous semiconductors (AOS)
Display devices
Displays
Electroluminescence
electroluminescent (EL) devices
Electroluminescent devices
flat panel displays
Frequency modulation
Indium
Indium gallium zinc oxide
Phosphors
Pixels
Rare earth metals
Semiconductor devices
Semiconductor thin films
Semiconductors
Thin film transistors
thin-film transistors (TFTs)
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Summary:In this study, an active matrix pixel was fabricated and characterized using indium gallium zinc oxide (IGZO) thin-film transistors and a novel electroluminescent (EL) Eu:IGZO thin-film phosphor. The results show that even large and unoptimized IGZO devices are capable of modulating at the frequencies necessary for modern display technology. Furthermore, we demonstrate a rare-earth doped amorphous-oxide semiconductor (AOS) EL phosphor that can be modulated via a TFT.
ISSN:1551-319X
1558-9323
DOI:10.1109/JDT.2009.2024012