Flexible resistance memory devices based on Cu/ZnO:Mg/ITO structure

• Published in: Physica status solidi. PSS-RRL. Rapid research letters 2010-12, Vol.4 (12), p.344-346
• Main Authors: Shi, Lei, Shang, Da-Shan, Sun, Ji-Rong, Shen, Bao-Gen
• Format: Article
• Language: English
• Subjects: Applied sciences; Copper; Data storage; Devices; electrochemical migration; Electronics; Exact sciences and technology; flexible devices; Integrated circuits; Low resistance; Memory devices; Migration; non-volatile memory; Polyethylene terephthalates; resistive switching; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Switching
• ISSN: 1862-6254; 1862-6270; 1862-6270
• DOI: 10.1002/pssr.201004364

Resistance memory devices based on a Cu/Mg‐doped ZnO/indium‐tin‐oxide structure on a PET (polyethylene terephthalate) flexible substrate were fabricated. The devices showed stable bipolar resistance switching property and good flexibility. The high to low resistance ratio was larger than 30 times, the endurance was more than 102 cycles, and the resistance retention was longer than 104 s. The resistance values of both high and low resistance states were not significantly changed by bending in a radius (≥20 mm) for more than 103 times. This resistance switching phenomenon of our devices can be explained by creation/rupture of metal conductive channels induced by electrochemical migration of Cu ions. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) This letter presents a Cu/Mg‐doped ZnO/ITO structure prepared on a flexible PET substrate at low temperature. The devices exhibited good stable and repeatable resistance switching along with good flexibility and mechanical endurance. These properties give the device a promising application in flexible electronic systems.