Tailoring the properties of semiconductor nanowires using ion beams

This review demonstrates that ion irradiation is a very useful tool in order to tailor the properties of semiconductor nanowires. Besides optical and electrical doping provided by adequate ion species and ion energies, one can use ion beams also for the controlled shaping of the morphology of nanost...

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Bibliographic Details
Published in:Physica Status Solidi (b) 2010-10, Vol.247 (10), p.2329-2337
Main Authors: Ronning, C., Borschel, C., Geburt, S., Niepelt, R., Müller, S., Stichtenoth, D., Richters, J. -P., Dev, A., Voss, T., Chen, L., Heimbrodt, W., Gutsche, C., Prost, W.
Format: Article
Language:English
Subjects:
defects
Doping
Ion beams
Nanomaterials
Nanostructure
Nanowires
Rare earth elements
Semiconductors
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Summary:This review demonstrates that ion irradiation is a very useful tool in order to tailor the properties of semiconductor nanowires. Besides optical and electrical doping provided by adequate ion species and ion energies, one can use ion beams also for the controlled shaping of the morphology of nanostructures. Here, one utilizes the commonly as ‘negative’ described characteristics of ion implantation: defect formation and sputtering. We show that ion beams can be even used for an alignment of the nanowires. Furthermore, we report here on several successful experiments in order to modify the electrical and optical properties in a controlled manner of ZnO semiconductor nanowires by the use of transition metals, rare earth elements and hydrogen ions. Schematic illustration of ion beam doping of a single contacted nanowire.
ISSN:0370-1972
1521-3951
1521-3951
DOI:10.1002/pssb.201046192