Improvements on voltage-resistant performance of bipolar static induction transistor (BSIT) with buried gate structure

The breakdown mechanism of power bipolar static induction transistor (BSIT) with buried gate structure is analyzed in depth. A power BSIT sample with high voltage-resistant capability has been designed and fabricated in this paper. The technological methods for improving high voltage performances ar...

Full description

Saved in:
Bibliographic Details
Published in:Science China. Information sciences 2012-04, Vol.55 (4), p.962-970
Main Authors: Wang, YongShun, Feng, JingJing, Liu, ChunJuan, Wang, ZiTing, Wang, ZaiXing, Zhang, CaiZhen
Format: Article
Language:English
Subjects:
Breakdown
Buried structures
Computer Science
Electric fields
Electric potential
Electric power generation
Electrical junctions
Gates
High voltages
Information Systems and Communication Service
Research Paper
Semiconductor devices
Transistors
Voltage
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The breakdown mechanism of power bipolar static induction transistor (BSIT) with buried gate structure is analyzed in depth. A power BSIT sample with high voltage-resistant capability has been designed and fabricated in this paper. The technological methods for improving high voltage performances are represented. The active region of BSIT is surrounded with a deep trench to avoid any probable influences of various defects on device performances. Two field-limiting ring-shape junctions and one channel termination ring-shape junction are arranged around the gate region to reduce the electric field intensity. The gate-source breakdown voltage BV GS of power BSIT has been increased to 110 V from previous value of 50–60 V, and its blocking voltage is increased to 1700 V. The optimal geometrical dimensions for achieving the maximum breakdown voltage BV GS and blocking voltage V block are also represented in the paper.
ISSN:1674-733X
1869-1919
DOI:10.1007/s11432-011-4523-1