Two- and Three-Terminal Resistive Switches: Nanometer-Scale Memristors and Memistors

The logical relationship between two previously defined “memory resistors” is revealed by constructing and experimentally demonstrating a three‐terminal memistor equivalent circuit using two two‐terminal memristors. A technique is then presented, using nanoimprint lithography in combination with ang...

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Bibliographic Details
Published in:Advanced functional materials 2011-07, Vol.21 (14), p.2660-2665
Main Authors: Xia, Qiangfei, Pickett, Matthew D., Yang, J. Joshua, Li, Xuema, Wu, Wei, Medeiros-Ribeiro, Gilberto, Williams, R. Stanley
Format: Article
Language:English
Subjects:
Devices
Evaporation
Lithography
logic circuits
memistors
memristors
Nanocomposites
nanoimprint lithography
Nanomaterials
Nanostructure
Resistors
surface patterning
Switches
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Summary:The logical relationship between two previously defined “memory resistors” is revealed by constructing and experimentally demonstrating a three‐terminal memistor equivalent circuit using two two‐terminal memristors. A technique is then presented, using nanoimprint lithography in combination with angle evaporation, to fabricate a single nanoscale device with a footprint of 4F2, where F is the minimum lithographic feature size, that can be operated as either a two‐terminal lateral memristor or a three‐terminal memistor inside a crossbar structure. These devices exhibit repeatable bipolar nonvolatile switching behavior with up to 103 ON/OFF conductance ratios, as well as the desired three‐terminal behavior. A single nanoscale device that can be operated as either a two‐terminal lateral memristor or a three‐terminal memistor inside a crossbar structure is fabricated using a technique based on nanoimprint lithography and angle evaporation.
ISSN:1616-301X
1616-3028
1616-3028
DOI:10.1002/adfm.201100180