Luminescence imaging for inline characterisation in silicon photovoltaics

Luminescence imaging is a very rapid technique for the characterisation of silicon samples. Megapixel luminescence images on silicon bricks, unprocessed wafers, partially processed wafers and fully processed cells can be captured with acquisition times of typically a few seconds or less than one sec...

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Bibliographic Details
Published in:Physica status solidi. PSS-RRL. Rapid research letters 2011-04, Vol.5 (4), p.131-137
Main Authors: Trupke, Thorsten, Nyhus, Jørgen, Haunschild, Jonas
Format: Article
Language:English
Subjects:
Bricks
Cross-disciplinary physics: materials science
rheology
Devices
Exact sciences and technology
Imaging
Luminescence
Materials science
Materials testing
Monitoring
photoluminescence imaging
Physics
Silicon
solar cells
Wafers
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Summary:Luminescence imaging is a very rapid technique for the characterisation of silicon samples. Megapixel luminescence images on silicon bricks, unprocessed wafers, partially processed wafers and fully processed cells can be captured with acquisition times of typically a few seconds or less than one second. A number of specific luminescence imaging applications have been developed over the last three years, allowing quantitative spatial information to be gained about a variety of crucial material and device parameters. This paper reviews some of the intriguing possibilities for inline monitoring in PV production at an early stage of production that result from the above mentioned short measurement times. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) Photoluminescence imaging has recently been developed into an important characterisation tool for silicon samples. With short measurement times and high spatial resolution it offers fascinating new opportunities, for example for process monitoring in photovoltaic production across the entire value chain. Some of these applications are reviewed here.
ISSN:1862-6254
1862-6270
1862-6270
DOI:10.1002/pssr.201084028