High-Quality (211)B CdTe on (211)Si Substrates Using Metalorganic Vapor-Phase Epitaxy

• Published in: Journal of electronic materials 2011-08, Vol.40 (8), p.1790-1794
• Main Authors: Rao, S. R., Shintri, S. S., Markunas, J. K., Jacobs, R. N., Bhat, I. B.
• Format: Article
• Language: English
• Subjects: Cadmium tellurides; Characterization and Evaluation of Materials; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Chemistry and Materials Science; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Density; Diffraction; Electronics and Microelectronics; Epitaxy; Exact sciences and technology; Germanium; Infrared radiation; Instrumentation; Materials Science; Mercury cadmium telluride; Methods of deposition of films and coatings; film growth and epitaxy; Molecular beam epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; MOVPE epitaxy; Optical and Electronic Materials; Physics; Semiconductor annealing; Silicon; Silicon films; Solid State Physics; Structure and morphology; thickness; Studies; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Vapor phase epitaxy; growth from vapor phase
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-011-1586-0

High-quality (211)B CdTe buffer layers are required during Hg 1− x Cd x Te heteroepitaxy on Si substrates. In this study, direct metalorganic vapor-phase epitaxy (MOVPE) of (211)B CdTe on Si, as well as CdTe on Si using intermediate Ge and ZnTe layers, has been achieved. Tertiary butyl arsine was used as a precursor to enable As surfactant action during CdTe MOVPE on Si. The grown CdTe/Si films display a best x-ray diffraction rocking-curve full-width at half-maximum of 64 arc-s and a best Everson etch pit density of 3 × 10 5  cm −2 . These values are the best reported for MOVPE-grown (211)B CdTe/Si and match state-of-the-art material grown using molecular-beam epitaxy.