Loading…

Towards the cost effective epitaxy of hillocks free CdZnTe film on (001)GaAs by close-spaced sublimation

Cost-effective epitaxy of hillocks free CdZnTe films on (001)GaAs was explored with close-spaced sublimation (CSS) technique. The orientation and film quality were studied with scanning electron microscopy (SEM), X-ray diffraction θ–2θ and Φ scans and rocking, and cross-sectional transmission electr...

Full description

Saved in:
Bibliographic Details
Published in:Materials letters 2012-07, Vol.78, p.39-41
Main Authors: Gao, Junning, Jie, Wanqi, Xie, Yong, Zheng, Xin, Yu, Hui, Wang, Tao, Pan, Guoqiang
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c339t-8fe5a14af6eca8a40feb4c1d81985cad06c27d3582785bcdde016f5a1ae452ca3
cites cdi_FETCH-LOGICAL-c339t-8fe5a14af6eca8a40feb4c1d81985cad06c27d3582785bcdde016f5a1ae452ca3
container_end_page 41
container_issue
container_start_page 39
container_title Materials letters
container_volume 78
creator Gao, Junning
Jie, Wanqi
Xie, Yong
Zheng, Xin
Yu, Hui
Wang, Tao
Pan, Guoqiang
description Cost-effective epitaxy of hillocks free CdZnTe films on (001)GaAs was explored with close-spaced sublimation (CSS) technique. The orientation and film quality were studied with scanning electron microscopy (SEM), X-ray diffraction θ–2θ and Φ scans and rocking, and cross-sectional transmission electron microscopy (TEM). It is found that higher deposition rate and better film quality can be achieved simultaneously at the elevated source and substrate temperatures. The full width half maximum (FWHM) of the X-ray rocking curve for (004) plane of the best CdZnTe film obtained so far is 306arcsec, which was deposited at a rate of 1μm/min under 100Pa of Ar. The hillocks are believed to be prevented due to the prevention of the formation and propagation of long stacking faults. ► Hillocks free CdZnTe epi-layer was grown by a one-step CSS process. ► Higher growth rate and better film quality can be achieved simultaneously. ► The FWHM of (004) rocking curve of the film deposited at 1μm/min is 306arcsec.
doi_str_mv 10.1016/j.matlet.2012.03.050
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1031308725</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0167577X12004028</els_id><sourcerecordid>1031308725</sourcerecordid><originalsourceid>FETCH-LOGICAL-c339t-8fe5a14af6eca8a40feb4c1d81985cad06c27d3582785bcdde016f5a1ae452ca3</originalsourceid><addsrcrecordid>eNp9kLFOwzAURS0EEqXwBwwey5DwHCdNsiBVFRSkSixFQiyWaz-rLm5c7LTQv8dVmZnecu7Vu4eQWwY5Aza-X-cb2Tvs8wJYkQPPoYIzMmBNzbOyrdtzMkhYnVV1_X5JrmJcA0DZQjkgq4X_lkFH2q-QKh97isag6u0eKW5tL38O1Bu6ss559RmpCYh0qj-6BVJj3Yb6jo4A2N1MTiJdHqhyPmIWt1KhpnG3dDb9Zn13TS6MdBFv_u6QvD09LqbP2fx19jKdzDPFedtnjcFKslKaMSrZyBIMLkvFdMPaplJSw1gVteZVU9RNtVRaY1pmUkRiWRVK8iEZnXq3wX_tMPZiY6NC52SHfhcFA844NHVRJbQ8oSr4GAMasQ3p23BIkDiKFWtxEiuOYgVwkcSm2MMphmnG3mIQUVns0l4bkjmhvf2_4BfuU4RV</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1031308725</pqid></control><display><type>article</type><title>Towards the cost effective epitaxy of hillocks free CdZnTe film on (001)GaAs by close-spaced sublimation</title><source>ScienceDirect Freedom Collection 2022-2024</source><creator>Gao, Junning ; Jie, Wanqi ; Xie, Yong ; Zheng, Xin ; Yu, Hui ; Wang, Tao ; Pan, Guoqiang</creator><creatorcontrib>Gao, Junning ; Jie, Wanqi ; Xie, Yong ; Zheng, Xin ; Yu, Hui ; Wang, Tao ; Pan, Guoqiang</creatorcontrib><description>Cost-effective epitaxy of hillocks free CdZnTe films on (001)GaAs was explored with close-spaced sublimation (CSS) technique. The orientation and film quality were studied with scanning electron microscopy (SEM), X-ray diffraction θ–2θ and Φ scans and rocking, and cross-sectional transmission electron microscopy (TEM). It is found that higher deposition rate and better film quality can be achieved simultaneously at the elevated source and substrate temperatures. The full width half maximum (FWHM) of the X-ray rocking curve for (004) plane of the best CdZnTe film obtained so far is 306arcsec, which was deposited at a rate of 1μm/min under 100Pa of Ar. The hillocks are believed to be prevented due to the prevention of the formation and propagation of long stacking faults. ► Hillocks free CdZnTe epi-layer was grown by a one-step CSS process. ► Higher growth rate and better film quality can be achieved simultaneously. ► The FWHM of (004) rocking curve of the film deposited at 1μm/min is 306arcsec.</description><identifier>ISSN: 0167-577X</identifier><identifier>EISSN: 1873-4979</identifier><identifier>DOI: 10.1016/j.matlet.2012.03.050</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Cadmium zinc tellurides ; CdZnTe ; Close-spaced sublimation ; Cross sections ; Deposition ; Diffraction ; Epitaxial growth ; Epitaxy ; Scanning electron microscopy ; Semiconductors ; Sublimation ; Thick films ; X-rays</subject><ispartof>Materials letters, 2012-07, Vol.78, p.39-41</ispartof><rights>2012 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c339t-8fe5a14af6eca8a40feb4c1d81985cad06c27d3582785bcdde016f5a1ae452ca3</citedby><cites>FETCH-LOGICAL-c339t-8fe5a14af6eca8a40feb4c1d81985cad06c27d3582785bcdde016f5a1ae452ca3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Gao, Junning</creatorcontrib><creatorcontrib>Jie, Wanqi</creatorcontrib><creatorcontrib>Xie, Yong</creatorcontrib><creatorcontrib>Zheng, Xin</creatorcontrib><creatorcontrib>Yu, Hui</creatorcontrib><creatorcontrib>Wang, Tao</creatorcontrib><creatorcontrib>Pan, Guoqiang</creatorcontrib><title>Towards the cost effective epitaxy of hillocks free CdZnTe film on (001)GaAs by close-spaced sublimation</title><title>Materials letters</title><description>Cost-effective epitaxy of hillocks free CdZnTe films on (001)GaAs was explored with close-spaced sublimation (CSS) technique. The orientation and film quality were studied with scanning electron microscopy (SEM), X-ray diffraction θ–2θ and Φ scans and rocking, and cross-sectional transmission electron microscopy (TEM). It is found that higher deposition rate and better film quality can be achieved simultaneously at the elevated source and substrate temperatures. The full width half maximum (FWHM) of the X-ray rocking curve for (004) plane of the best CdZnTe film obtained so far is 306arcsec, which was deposited at a rate of 1μm/min under 100Pa of Ar. The hillocks are believed to be prevented due to the prevention of the formation and propagation of long stacking faults. ► Hillocks free CdZnTe epi-layer was grown by a one-step CSS process. ► Higher growth rate and better film quality can be achieved simultaneously. ► The FWHM of (004) rocking curve of the film deposited at 1μm/min is 306arcsec.</description><subject>Cadmium zinc tellurides</subject><subject>CdZnTe</subject><subject>Close-spaced sublimation</subject><subject>Cross sections</subject><subject>Deposition</subject><subject>Diffraction</subject><subject>Epitaxial growth</subject><subject>Epitaxy</subject><subject>Scanning electron microscopy</subject><subject>Semiconductors</subject><subject>Sublimation</subject><subject>Thick films</subject><subject>X-rays</subject><issn>0167-577X</issn><issn>1873-4979</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNp9kLFOwzAURS0EEqXwBwwey5DwHCdNsiBVFRSkSixFQiyWaz-rLm5c7LTQv8dVmZnecu7Vu4eQWwY5Aza-X-cb2Tvs8wJYkQPPoYIzMmBNzbOyrdtzMkhYnVV1_X5JrmJcA0DZQjkgq4X_lkFH2q-QKh97isag6u0eKW5tL38O1Bu6ss559RmpCYh0qj-6BVJj3Yb6jo4A2N1MTiJdHqhyPmIWt1KhpnG3dDb9Zn13TS6MdBFv_u6QvD09LqbP2fx19jKdzDPFedtnjcFKslKaMSrZyBIMLkvFdMPaplJSw1gVteZVU9RNtVRaY1pmUkRiWRVK8iEZnXq3wX_tMPZiY6NC52SHfhcFA844NHVRJbQ8oSr4GAMasQ3p23BIkDiKFWtxEiuOYgVwkcSm2MMphmnG3mIQUVns0l4bkjmhvf2_4BfuU4RV</recordid><startdate>20120701</startdate><enddate>20120701</enddate><creator>Gao, Junning</creator><creator>Jie, Wanqi</creator><creator>Xie, Yong</creator><creator>Zheng, Xin</creator><creator>Yu, Hui</creator><creator>Wang, Tao</creator><creator>Pan, Guoqiang</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20120701</creationdate><title>Towards the cost effective epitaxy of hillocks free CdZnTe film on (001)GaAs by close-spaced sublimation</title><author>Gao, Junning ; Jie, Wanqi ; Xie, Yong ; Zheng, Xin ; Yu, Hui ; Wang, Tao ; Pan, Guoqiang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c339t-8fe5a14af6eca8a40feb4c1d81985cad06c27d3582785bcdde016f5a1ae452ca3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Cadmium zinc tellurides</topic><topic>CdZnTe</topic><topic>Close-spaced sublimation</topic><topic>Cross sections</topic><topic>Deposition</topic><topic>Diffraction</topic><topic>Epitaxial growth</topic><topic>Epitaxy</topic><topic>Scanning electron microscopy</topic><topic>Semiconductors</topic><topic>Sublimation</topic><topic>Thick films</topic><topic>X-rays</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gao, Junning</creatorcontrib><creatorcontrib>Jie, Wanqi</creatorcontrib><creatorcontrib>Xie, Yong</creatorcontrib><creatorcontrib>Zheng, Xin</creatorcontrib><creatorcontrib>Yu, Hui</creatorcontrib><creatorcontrib>Wang, Tao</creatorcontrib><creatorcontrib>Pan, Guoqiang</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gao, Junning</au><au>Jie, Wanqi</au><au>Xie, Yong</au><au>Zheng, Xin</au><au>Yu, Hui</au><au>Wang, Tao</au><au>Pan, Guoqiang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Towards the cost effective epitaxy of hillocks free CdZnTe film on (001)GaAs by close-spaced sublimation</atitle><jtitle>Materials letters</jtitle><date>2012-07-01</date><risdate>2012</risdate><volume>78</volume><spage>39</spage><epage>41</epage><pages>39-41</pages><issn>0167-577X</issn><eissn>1873-4979</eissn><abstract>Cost-effective epitaxy of hillocks free CdZnTe films on (001)GaAs was explored with close-spaced sublimation (CSS) technique. The orientation and film quality were studied with scanning electron microscopy (SEM), X-ray diffraction θ–2θ and Φ scans and rocking, and cross-sectional transmission electron microscopy (TEM). It is found that higher deposition rate and better film quality can be achieved simultaneously at the elevated source and substrate temperatures. The full width half maximum (FWHM) of the X-ray rocking curve for (004) plane of the best CdZnTe film obtained so far is 306arcsec, which was deposited at a rate of 1μm/min under 100Pa of Ar. The hillocks are believed to be prevented due to the prevention of the formation and propagation of long stacking faults. ► Hillocks free CdZnTe epi-layer was grown by a one-step CSS process. ► Higher growth rate and better film quality can be achieved simultaneously. ► The FWHM of (004) rocking curve of the film deposited at 1μm/min is 306arcsec.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.matlet.2012.03.050</doi><tpages>3</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0167-577X
ispartof Materials letters, 2012-07, Vol.78, p.39-41
issn 0167-577X
1873-4979
language eng
recordid cdi_proquest_miscellaneous_1031308725
source ScienceDirect Freedom Collection 2022-2024
subjects Cadmium zinc tellurides
CdZnTe
Close-spaced sublimation
Cross sections
Deposition
Diffraction
Epitaxial growth
Epitaxy
Scanning electron microscopy
Semiconductors
Sublimation
Thick films
X-rays
title Towards the cost effective epitaxy of hillocks free CdZnTe film on (001)GaAs by close-spaced sublimation
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T19%3A36%3A17IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Towards%20the%20cost%20effective%20epitaxy%20of%20hillocks%20free%20CdZnTe%20film%20on%20(001)GaAs%20by%20close-spaced%20sublimation&rft.jtitle=Materials%20letters&rft.au=Gao,%20Junning&rft.date=2012-07-01&rft.volume=78&rft.spage=39&rft.epage=41&rft.pages=39-41&rft.issn=0167-577X&rft.eissn=1873-4979&rft_id=info:doi/10.1016/j.matlet.2012.03.050&rft_dat=%3Cproquest_cross%3E1031308725%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c339t-8fe5a14af6eca8a40feb4c1d81985cad06c27d3582785bcdde016f5a1ae452ca3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=1031308725&rft_id=info:pmid/&rfr_iscdi=true