Effects of High-Energy Electron Irradiation on ZnO/Si MSM Photodetectors

ZnO/Si metal–semiconductor–metal photodetectors (MSM-PDs) were subjected to high-energy electron irradiation (HEEI) to total fluence of 2 × 10 13  cm −2 . ZnO/Si MSM-PDs demonstrated at least 43% greater radiation resistance than similar Si devices. Room-temperature annealing of radiation damage was...

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Bibliographic Details
Published in:Journal of electronic materials 2011-04, Vol.40 (4), p.433-439
Main Authors: Catalfamo, Frank, Yen, Tingfang, Yun, Juhyung, Anderson, Wayne A.
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemistry and Materials Science
Devices
Electrical engineering
Electron irradiation
Electronics and Microelectronics
Electrons
Instrumentation
Materials Science
Optical and Electronic Materials
Photocurrent
Photodetectors
Photoelectric effect
Radiation
Semiconductors
Silicon
Solid State Physics
Zinc
Zinc oxide
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Summary:ZnO/Si metal–semiconductor–metal photodetectors (MSM-PDs) were subjected to high-energy electron irradiation (HEEI) to total fluence of 2 × 10 13  cm −2 . ZnO/Si MSM-PDs demonstrated at least 43% greater radiation resistance than similar Si devices. Room-temperature annealing of radiation damage was observed as 63% recovery of photocurrent over 47 days. The current transport mechanism for ZnO/Si MSM-PDs was dominated by space-charge-limited conduction (SCLC) with minimal effect on conduction regime due to HEEI. Analysis of photoluminescence (PL) data indicates that the radiation-induced defects are likely oxygen and zinc vacancies, i.e., (V 0 + ) and , respectively.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-010-1411-1