Improving the electrical performance of resistive switching memory using doping technology

In this paper, improvements of resistive random access memory （RRAM） using doping technology are summarized and analyzed. Based on a Cu/ZrO2/Pt device, three doping technologies with Ti ions, Cu, and Cu nanocrystal, respectively, are adopted in the experiments. Compared to an undoped device, improve...

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Bibliographic Details
Published in:Chinese science bulletin 2012-04, Vol.57 (11), p.1235-1240
Main Authors: Wang, Yan, Liu, Qi, Lü, HangBing, Long, ShiBing, Wang, Wei, Li, YingTao, Zhang, Sen, Lian, WenTai, Yang, JianHong, Liu, Ming
Format: Article
Language:English
Subjects:
Chemistry/Food Science
Copper
Devices
Doping
Earth Sciences
Electroforming
Engineering
Humanities and Social Sciences
ions
Life Sciences
multidisciplinary
Nanocrystals
Performance enhancement
Physics
Review
Science
Science (multidisciplinary)
thermal stability
Variability
Voltage
兴奋剂
掺杂技术
电气性能
电铸工艺
电阻式
纳米晶体
记忆体
随机存取存储器
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Summary:In this paper, improvements of resistive random access memory （RRAM） using doping technology are summarized and analyzed. Based on a Cu/ZrO2/Pt device, three doping technologies with Ti ions, Cu, and Cu nanocrystal, respectively, are adopted in the experiments. Compared to an undoped device, improvements focus on four points： eliminating the electroforming process, reduc- ing operation voltage, improving electrical uniformity, and increasing device yield. In addition, thermal stability of the high re- sistance state and better retention are also achieved by the doping technology. We demonstrate that doping technology is an effec- tive way of improving the electrical performance of RRAM.
ISSN:1001-6538
1861-9541
DOI:10.1007/s11434-011-4930-0