Temperature Characteristics and Analysis of Monolithic Microwave CMOS Distributed Oscillators With G m -Varied Gain Cells and Folded Coplanar Interconnects

The performance of a novel Monolithic Microwave CMOS Distributed Oscillator is reported over a temperature range of - hbox 25 [compfn] C to 75 [compfn] C for the first time, along with an analysis of its design characteristics and its temperature stability. The oscillator is stable over the entire t...

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Bibliographic Details
Published in:IEEE transactions on very large scale integration (VLSI) systems 2012-07, Vol.20 (7), p.1332-1336
Main Authors: Bhattacharyya, Kalyan, Szymanski, Ted H
Format: Article
Language:English
Subjects:
CMOS
Gain
Microwaves
Noise
Oscillators
Stability
Traveling wave amplifiers
Very large scale integration
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Summary:The performance of a novel Monolithic Microwave CMOS Distributed Oscillator is reported over a temperature range of - hbox 25 [compfn] C to 75 [compfn] C for the first time, along with an analysis of its design characteristics and its temperature stability. The oscillator is stable over the entire temperature range of 100 [compfn] C. The monolithic distributed oscillator (DO) is designed and fabricated in an industry standard 0.18 mu m CMOS process, using an n-FET-based traveling wave amplifier (TWA), coplanar waveguides (CPW), and a new coplanar interconnect structure called a 'folded CPW'. The measured loss of the "folded CPW" is 1.259 dB at 10 GHz. The distributed oscillator uses a novel architecture of G m -varied gain cells and operates at a bias of 1.8 V. The measured oscillation frequency is 11.7 GHz with 6.1 dBm output power and the measured phase noise is - 116.02 dBc/Hz at 1 MHz offset, which represent the best reported power and one of the best phase noise results for silicon DOs with temperature stability.
ISSN:1063-8210
1557-9999
DOI:10.1109/TVLSI.2011.2148130